Size-Dependent and Multi-Field Coupling Behavior of Layered Multiferroic Nanocomposites

Size-Dependent and Multi-Field Coupling Behavior of Layered Multiferroic Nanocomposites
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层状多铁纳米复合材料的尺寸依赖性和多场耦合行为

DOI:
10.3390/ma12020260
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发表时间:
2019-01
期刊:
影响因子:
3.4
通讯作者:
Wang Yongkun
Wang Yongkun
中科院分区:
材料科学3区
文献类型:
--
作者:
Shi Yang;Wang Yongkun

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预测纳米多铁性复合材料中的磁电耦合对纳米器件的研究具有重要意义。本文基于表面应力模型、应变梯度理论和非线性磁弹热耦合本构关系,提出了层状多铁性纳米复合材料中电磁场效应的非线性多场耦合模型。利用这一新模型,首次讨论了外场对应变梯度和挠曲电性的影响。同时,对微电子器件的尺寸依赖性参数和多场条件对微电子器件性能的影响进行了全面的研究。数值计算结果表明,随着复合材料厚度减小到纳米级,电磁耦合具有明显的尺寸依赖性。特别地,ME系数通过表面效应或挠曲电性而增强。复合材料在纳米尺度下存在明显的应变梯度,并通过材料性能的变化受到不同程度的外界刺激的影响。更重要的是,由于铁磁材料的非线性多场耦合行为,适当的压应力和温度可以提高ME系数的值,降低所需的磁场。本文为分析和评价基于纳米结构的微电子器件的多场耦合特性提供了理论基础。
The prediction of magnetoelectric (ME) coupling in nano-scaled multiferroic composites is significant for nano-devices. In this paper, we propose a nonlinear multi-field coupling model for ME effect in layered multiferroic nanocomposites based on the surface stress model, strain gradient theory and nonlinear magneto-elastic-thermal coupling constitutive relation. With this novel model, the influence of external fields on strain gradient and flexoelectricity is discussed for the first time. Meanwhile, a comprehensive investigation on the influence of size-dependent parameters and multi-field conditions on ME performance is made. The numerical results show that ME coupling is remarkably size-dependent as the thickness of the composites reduces to nanoscale. Especially, the ME coefficient is enhanced by either surface effect or flexoelectricity. The strain gradient in composites at the nano-scale is significant and influenced by the external stimuli at different levels via the change in materials’ properties. More importantly, due to the nonlinear multi-field coupling behavior of ferromagnetic materials, appropriate compressive stress and temperature may improve the value of ME coefficient and reduce the required magnetic field. This paper provides a theoretical basis to analyze and evaluate multi-field coupling characteristics of nanostructure-based ME devices.
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