Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.
Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.
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DOI：
10.1038/ncomms1657
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发表时间：
2012-02-07
影响因子：
16.6
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中科院分区：
文献类型：
--
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半导体量子点是有效产生偏振纠缠光子的潜在光源。双激子-激子级联发光产生这种光的主要前提是控制激子精细结构的分裂。在为此目的而研究的各种技术中，电场是促进集成到光电器件中的有前途的手段。在这里，我们演示了由单个GaAs量子点产生的偏振纠缠光子的电场。与以前的研究（其限于In（Ga）As量子点）相反，使用通过厚度波动形成的GaAs岛量子点，因为它们表现出更大的振荡器强度并且发射具有更短波长的光。在肖特基二极管上施加正向电压以控制精细结构分裂。我们观察到所研究的单个量子点的精细结构分裂随着场的减少和抑制，这使得我们能够产生具有0.72±0.05的高保真度的偏振纠缠光子。随着量子信息和通信实验越来越复杂，对纠缠光子的有效来源的需求升级。利用GaAs岛量子点中的激子和双激子发射，Ghali等人展示了电场诱导的高保真纠缠光子的产生。
Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. As quantum information and communication experiments grow in sophistication, the need for efficient sources of entangled photons escalates. Using exciton and biexciton emission in GaAs island quantum dots, Ghali et al. demonstrate the electric field-induced generation of entangled photons with high fidelity.
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