Microwave Dielectric Properties of Low Temperature Firing Bi2Mo2O9 Ceramic

Microwave Dielectric Properties of Low Temperature Firing Bi2Mo2O9 Ceramic
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低温烧成Bi2Mo2O9陶瓷的微波介电性能

DOI:
10.1111/j.1551-2916.2008.02596.x
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发表时间:
2008-10
影响因子:
3.9
通讯作者:
--
中科院分区:
材料科学2区
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--
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研究了单相Bi2Mo2O9陶瓷的制备、相稳定性、烧结行为、微波介电性能及其与银的化学兼容性。单相Bi2Mo2O9陶瓷在620~645℃温度范围内具有良好的致密性,相对密度约为96%。X射线衍射数据表明,Bi2Mo2O9具有单斜晶系结构(P21/n),晶胞参数为a=11.9664 A,b=10.8089 A,c=11.8871 A。当烧结温度≥为650℃时,Bi2Mo3O12以第二相的形式出现。纯单斜相Bi2Mo2O9陶瓷在620℃下烧结2 h,具有良好的微波介电性能,介电常数约为38,Qf值约为12~500 GHz,谐振频率温度系数约为+31ppm/°C,经孔隙率校正后的单相Bi2Mo2O9的介电常数约为40.17。然而,Bi2Mo2O9与Ag之间的反应将影响其在低温共烧陶瓷中的进一步应用。
Preparation, phase stability, sintering behavior, microwave dielectric properties of single-phase Bi2Mo2O9 ceramic and its chemical compatibility with Ag have been investigated. The single-phase Bi2Mo2O9 ceramic can be well densified in the temperature range from 620° to 645°C with relative density about 96%. X-ray diffraction data show that Bi2Mo2O9 has a monoclinic structure (P21/n), with lattice parameters a=11.9664 A, b=10.8089 A, and c=11.8871 A. When sintering temperature ≥650°C, Bi2Mo3O12 appears as a secondary phase. Pure monoclinic Bi2Mo2O9 ceramic sintered at 620°C for 2 h exhibits good microwave dielectric properties with permittivity about 38, Qf value about 12 500 GHz and temperature coefficient of resonant frequency about +31ppm/°C. The permittivity of single-phase Bi2Mo2O9 corrected for porosity is about 40.17. However, the reaction between Bi2Mo2O9 and Ag will affect its further application in low-temperature cofired ceramic.
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