Asymmetric electric field screening in van der Waals heterostructures.
Asymmetric electric field screening in van der Waals heterostructures.
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DOI：
10.1038/s41467-018-03592-3
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发表时间：
2018-03-28
影响因子：
16.6
通讯作者：
Santos EJG
中科院分区：
文献类型：
--
作者：
Li LH;Tian T;Cai Q;Shih CJ;Santos EJG
将二维晶体组合成异质结所面临的长期挑战是不同电子性质（半导体、金属、绝缘体）的混合层对所制造的器件平台的屏蔽特征（包括其功能性）的未知影响。在这里，我们使用一组令人信服的理论和实验技术来阐明由二硫化钼和石墨烯层形成的异质结构的固有介电屏蔽特性。我们实验观察到一个不对称的场屏蔽效应相对于所施加的栅极偏置到表面的极化。令人惊讶的是，这种行为允许选择屏蔽外场的电子状态，并且可以随着半导体MoS 2而不是半金属的层数的增加而增强。这项工作不仅提供了独特的见解，迄今为止制造的大量的异质结的屏蔽性能，但也揭示了巨大的潜力，控制器件应用的基本属性。在2D材料之间的界面处的电荷密度重组可导致电场屏蔽。在这里，作者研究了二硫化钼/石墨烯货车德瓦尔斯异质结构的介电屏蔽特性，并确定了在不同方向的外加电场下的非对称电响应。
A long-standing challenge facing the combination of two-dimensional crystals into heterojunction is the unknown effect of mixing layer of different electronic properties (semiconductors, metals, insulators) on the screening features of the fabricated device platforms including their functionality. Here we use a compelling set of theoretical and experimental techniques to elucidate the intrinsic dielectric screening properties of heterostructures formed by MoS2 and graphene layers. We experimentally observed an asymmetric field screening effect relative to the polarization of the applied gate bias into the surface. Surprisingly, such behavior allows selection of the electronic states that screen external fields, and it can be enhanced with increasing of the number of layers of the semiconducting MoS2 rather than the semi-metal. This work not only provides unique insights on the screening properties of a vast amount of heterojunction fabricated so far, but also uncovers the great potential of controlling a fundamental property for device applications. Charge density reorganization at the interface between 2D materials may lead to electric field screening. Here, the authors investigate the dielectric screening properties of MoS2/graphene van der Waals heterostructures and identify an asymmetric electric response under different directions of the applied electric field.
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影响因子：
3.7
作者：
Kresse, G;Furthmuller, J
通讯作者：
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影响因子：
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作者：
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通讯作者：
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影响因子：
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影响因子：
29.4
作者：
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通讯作者：
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