A SiGe-based wideband 220–310-GHz subharmonic receiver front-end for high resolution radar applications
A SiGe-based wideband 220–310-GHz subharmonic receiver front-end for high resolution radar applications
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适用于高分辨率雷达应用的基于 SiGe 的宽带 220–310 GHz 分谐波接收器前端
DOI：
10.1109/mwsym.2017.8058754
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
A. Stelzer
中科院分区：
文献类型：
--
作者：
Faisal Ahmed;M. Furqan;K. Aufinger;A. Stelzer
本文介绍了一种J波段（220-325 GHz）分谐波接收机前端实现在130 nm SiGe BiCMOS工艺。该接收器芯片在RF和LO端口集成LO放大器和宽带Marchand巴伦，用于单端测量。该次谐波下变频混频器是基于一种新颖的拓扑结构，该拓扑结构具有一个吉尔伯特单元，该单元具有堆叠的开关四边形，该四边形由等相位本地振荡器信号馈电。通过将RF输入信号直接匹配到开关四通道的发射极端子，而不使用前置放大器级，可以实现超宽带操作。接收器的晶圆测量结果显示，峰值转换增益为11 dB，最小双边带噪声系数约为16 dB，模拟输入压缩点为−7 dBm，总直流功耗为160 mW。该芯片具有最高的3 dB转换增益带宽和压缩点，适用于工作频率高于200 GHz的硅基接收机。
This paper presents a J-Band (220–325 GHz) subharmonic receiver front-end implemented in a 130 nm SiGe BiCMOS technology. The receiver chip includes integrated LO amplifiers and wideband Marchand baluns at the RF and LO ports for single-ended measurements. The subharmonic down-conversion mixer is based on a novel topology having a Gilbert cell with stacked switching quads, which are fed by equal-phase local oscillator signals. A very wideband operation is achieved by directly matching the RF input signal to the emitter terminals of the switching quad and not using a transconductance stage. On-wafer measurements of the receiver show a peak conversion gain of 11 dB, a minimum double side band noise figure of around 16 dB and a simulated input compression point of −7 dBm, while consuming a total DC power of 160 mW. The chip demonstrates the highest 3-dB conversion gain bandwidth and compression point for Si-based receivers operating above 200 GHz.
采用 SiGe 技术的完全集成 240 GHz 直接转换正交发射器和接收器芯片组
影响因子：
4.3
作者：
N. Sarmah;J. Grzyb;K. Statnikov;S. Malz;P. R. Vazquez;W. Foerster;B. Heinemann;U. R. Pfeiffer
通讯作者：
U. R. Pfeiffer