A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology
A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology
复制标题
采用 SiGe 技术的完全集成 240 GHz 直接转换正交发射器和接收器芯片组
DOI:
10.1109/tmtt.2015.2504930
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发表时间:
2015
影响因子:
4.3
通讯作者:
U. R. Pfeiffer
中科院分区:
文献类型:
--
作者:
N. Sarmah;J. Grzyb;K. Statnikov;S. Malz;P. R. Vazquez;W. Foerster;B. Heinemann;U. R. Pfeiffer
This paper presents a fully integrated direct-conversion quadrature transmitter and receiver chipset at 240 GHz. It is implemented in a 0.13-μm SiGe bipolar-CMOS technology. A wideband frequency multiplier (×16) based local-oscillator (LO) signal source and a wideband on-chip antenna designed to be used with an external replaceable silicon lens makes this chipset suited for applications requiring fixed and tunable LO. The chipset is packaged in a low-cost FR4 printed circuit board resulting in a complete solution with compact form-factor. At 236 GHz, the effective-isotropic-radiated-power is 21.86 dBm and the minimum single-sideband noise figure is 15 dB. The usable RF bandwidth for this chipset is 65 GHz and the 6-dB bandwidth is 17 GHz. At the system level, we demonstrate a high data-rate communication system where an external modem is operated in its two IF-bandwidth modes (250 MHz and 1 GHz). For the quadrature phase-shift keying modulation scheme, the measured data rate is 2.73 Gb/s (modem 1-GHz IF) with bit-error rate of 10-9for a 15-cm link. The estimated data rate over the 17-GHz RF bandwidth is, hence, 23.025 Gb/s. Also, higher order modulation schemes like 16 quadrature amplitude modulation (QAM) with a data rate of 0.677 Gb/s and 64-QAM with a data rate of 1.0154 Gb/s (modem 250-MHz IF) is demonstrated. A second application demonstrator is presented where the wide tunable RF bandwidth of the chipset is used for material characterization. It is used to characterize an FR4 material (DE104) over the 215-260-GHz range.
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影响因子:
5.4
作者:
Han, Ruonan;Afshari, Ehsan
通讯作者:
Afshari, Ehsan
DOI:
10.1109/rfic.2013.6569584
发表时间:
2013
期刊:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
影响因子:
--
作者:
N. Sarmah;B. Heinemann;U. Pfeiffer
通讯作者:
U. Pfeiffer
DOI:
10.1109/rfic.2014.6851691
发表时间:
2014-06
期刊:
2014 IEEE Radio Frequency Integrated Circuits Symposium
影响因子:
--
作者:
N. Sarmah;B. Heinemann;U. Pfeiffer
通讯作者:
N. Sarmah;B. Heinemann;U. Pfeiffer
DOI:
10.1109/rfic.2014.6851742
发表时间:
2014
期刊:
2014 IEEE Radio Frequency Integrated Circuits Symposium
影响因子:
--
作者:
S. Zeinolabedinzadeh;M. Kaynak;W. Khan;M. Kamarei;B. Tillack;J. Papapolymerou;J. Cressler
通讯作者:
J. Cressler
DOI:
10.1109/sirf.2011.5719319
发表时间:
2011
期刊:
2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
影响因子:
--
作者:
N. Sarmah;K. Schmalz;W. Winkler;C. Scheytt;S. Glisic
通讯作者:
S. Glisic