Ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition
Ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition
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脉冲激光沉积梯度掺杂 Y2O3:HfO2 薄膜的铁电性能
DOI：
10.1063/1.5121858
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发表时间：
2019-10
影响因子：
4
通讯作者：
Jianlu Wang
中科院分区：
文献类型：
--
作者：
Qianqian Shao;Xudong Wang;Wei Jiang;Yan Chen;Xiaoyu Zhang;Luqi Tu;Tie Lin;Hong Shen;Xiangjian Meng;Aiyun Liu;Jianlu Wang
基于HfO2的薄膜是一种纳米级的铁电材料，具有高k介电性能和与CMOS的兼容性，这使得它成为高性能电子产品的候选材料。在这里，我们展示了用脉冲激光沉积的方法合成了掺Y的HfO2(HyO)铁电薄膜。采用交替沉积HfO2陶瓷靶和Y2O3陶瓷靶的方法对H2O薄膜进行了梯度掺杂。掠入射X射线衍射仪和扫描电子显微镜测试结果表明，薄膜中存在正交相-铁电相。此外，HyO薄膜还具有优异的铁电和介电性能，其剩余极化可达10.5cm2μC/cm~2，介电常数为27。在压电功率显微镜图像中可以观察到磁畴的180°反转，而写入磁畴的位相对比度随着时间的推移而减弱。因此，这项工作为获得铁电HyO薄膜提供了一条可靠的途径，使其在未来的高性能纳米电子学中具有巨大的潜力。HfO2基薄膜是一种纳米级的铁电材料，具有高k介电性能和与CMOS的兼容性，这使得它成为高性能电子学的候选材料。在这里，我们展示了用脉冲激光沉积的方法合成了掺Y的HfO2(HyO)铁电薄膜。采用交替沉积HfO2陶瓷靶和Y2O3陶瓷靶的方法对H2O薄膜进行了梯度掺杂。掠入射X射线衍射仪和扫描电子显微镜测试结果表明，薄膜中存在正交相-铁电相。此外，HyO薄膜还具有优异的铁电和介电性能，其剩余极化可达10.5cm2μC/cm~2，介电常数为27。在压电功率显微镜图像中可以观察到磁畴的180°反转，而写入磁畴的位相对比度随着时间的推移而减弱。因此，这项工作为获得铁电薄膜提供了一条可靠的途径，使铁电薄膜具有巨大的发展潜力。
A HfO2-based thin film is a nanoscale ferroelectric material with a high-k dielectric and CMOS compatibility, which make it a promising candidate for high-performance electronics. Here, we demonstrate the synthesis of a ferroelectric Y-doped HfO2 (HYO) thin film by pulsed laser deposition. This HYO thin film is gradient doped by alternately depositing a HfO2 ceramic target and a Y2O3 ceramic target. In the films, the orthorhombic phase, ferroelectric phase, is proved by grazing incidence x-ray diffraction and scanning transmission electron microscopy measurements. Moreover, the HYO thin film embraces outstanding ferroelectric and dielectric properties, its remanent polarization is up to 10.5 μC/cm2, and the dielectric constant is 27. The 180° inversion of the domain can be observed in a piezoelectric power microscopy image, while the phase contrast of the write domain fades with time. Therefore, this work provides a reliable approach to obtain a ferroelectric HYO thin film, which enables great potential in future high-performance nanoelectronics.A HfO2-based thin film is a nanoscale ferroelectric material with a high-k dielectric and CMOS compatibility, which make it a promising candidate for high-performance electronics. Here, we demonstrate the synthesis of a ferroelectric Y-doped HfO2 (HYO) thin film by pulsed laser deposition. This HYO thin film is gradient doped by alternately depositing a HfO2 ceramic target and a Y2O3 ceramic target. In the films, the orthorhombic phase, ferroelectric phase, is proved by grazing incidence x-ray diffraction and scanning transmission electron microscopy measurements. Moreover, the HYO thin film embraces outstanding ferroelectric and dielectric properties, its remanent polarization is up to 10.5 μC/cm2, and the dielectric constant is 27. The 180° inversion of the domain can be observed in a piezoelectric power microscopy image, while the phase contrast of the write domain fades with time. Therefore, this work provides a reliable approach to obtain a ferroelectric HYO thin film, which enables great potential i...
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影响因子：
3.2
作者：
Materlik, R.;Kuenneth, C.;Kersch, A.
通讯作者：
Kersch, A.
影响因子：
4
作者：
Polakowski, Patrick;Mueller, Johannes
通讯作者：
Mueller, Johannes
影响因子：
41.2
作者：
Yingfen Wei;P. Nukala;M. Salverda;S. Matzen;H. Zhao;J. Momand;A. Everhardt;G. Agnus;G. Blake-G.-Bla
通讯作者：
Yingfen Wei;P. Nukala;M. Salverda;S. Matzen;H. Zhao;J. Momand;A. Everhardt;G. Agnus;G. Blake-G.-Bla
影响因子：
4.7
作者：
Lyu, Jike;Fina, Ignasi;Sanchez, Florencio
通讯作者：
Sanchez, Florencio
影响因子：
3.2
作者：
Florent, K.;Lavizzari, S.;Van Houdt, J.
通讯作者：
Van Houdt, J.