Variation of quantum-yield curves for GaAs photocathodes under illumination

Variation of quantum-yield curves for GaAs photocathodes under illumination
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GaAs光电阴极在光照下量子产率曲线的变化

DOI:
10.1063/1.2435075
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发表时间:
2007-02
影响因子:
3.2
通讯作者:
Zou, Jijun
Zou, Jijun
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Liu, Lei;Chang, Benkang;Chen, Huailin;Zou, Jijun

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利用室温量子产率测量仪,研究了反射模式和透射模式GaAs光电阴极在光照条件下的量子产率曲线变化。两种光电阴极的掺杂浓度和活性层厚度相同,分别为1×1019cm−3和1.6μm。用100lx强度的白光照射这些光电阴极,每隔一小时同时测量产率曲线。测量结果表明,反射模式光电阴极的产率曲线形状随光照时间的增加而迅速变化,而透射模式光电阴极的产率曲线形状几乎不变,其原因是两种光电阴极的光电子平均路径长度不同。在透射模式光电阴极的产率中,除了Γ以外的所有类型的光电发射都可以忽略,而所有的Γ、L和热电子光电发射都必须包括在反射模式光电阴极的产率中。基于双极小扩散模型和逃逸概率拟合,我们修正了反射模式光电阴极的量子效率方程,并用该方程解释了其屈服曲线的变化。利用室温量子产率测量仪,研究了反射模式和透射模式GaAs光电阴极在光照条件下的量子产率曲线变化。两种光电阴极的掺杂浓度和活性层厚度相同,分别为1×1019cm−3和1.6μm。用100lx强度的白光照射这些光电阴极,每隔一小时同时测量产率曲线。测量结果表明,反射模式光电阴极的产率曲线形状随光照时间的增加而迅速变化,而透射模式光电阴极的产率曲线形状几乎不变,其原因是两种光电阴极的光电子平均路径长度不同。在透射模式光电阴极的产率中,除了Γ外,所有类型的光电发射都可以忽略不计,而所有的Γ, L和热电子p…
The variation of the quantum-yield curves of reflection-mode and transmission-mode GaAs photocathodes under illumination has been studied using an instrument for measuring quantum yields at room temperature. The two kinds of photocathodes have an identical doping concentration and active-layer thickness, 1×1019cm−3 and 1.6μm, respectively. These photocathodes were illuminated by white light with an intensity of 100lx, and the yield curves were measured simultaneously every other hour. The measured results show that the shape of the yield curves for the reflection-mode photocathodes changes rapidly with increasing illumination time, whereas the shape of the curves for the transmission-mode photocathodes is almost constant, we find that the reason is the average path lengths that photoelectrons have to travel are different for the two kinds of photocathodes. In the yields of the transmission-mode photocathodes, all types of photoemission except Γ may be neglected, whereas all of the Γ, L, and hot-electron photoemission must be included in the yields of the reflection-mode photocathodes. Based on the two-minima diffusion model and the fit of the escape probability, we have revised the quantum-efficiency equation for the reflection-mode photocathodes and used this revised equation to explain the variation of their yield curves.The variation of the quantum-yield curves of reflection-mode and transmission-mode GaAs photocathodes under illumination has been studied using an instrument for measuring quantum yields at room temperature. The two kinds of photocathodes have an identical doping concentration and active-layer thickness, 1×1019cm−3 and 1.6μm, respectively. These photocathodes were illuminated by white light with an intensity of 100lx, and the yield curves were measured simultaneously every other hour. The measured results show that the shape of the yield curves for the reflection-mode photocathodes changes rapidly with increasing illumination time, whereas the shape of the curves for the transmission-mode photocathodes is almost constant, we find that the reason is the average path lengths that photoelectrons have to travel are different for the two kinds of photocathodes. In the yields of the transmission-mode photocathodes, all types of photoemission except Γ may be neglected, whereas all of the Γ, L, and hot-electron p...
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