Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films
Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films
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多步退火对ZnO:In-N薄膜结构、光学和电学性能的影响
DOI：
10.1016/j.apsusc.2020.146933
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发表时间：
2020-10
影响因子：
6.7
通讯作者：
Chunyang Kong
中科院分区：
文献类型：
--
作者：
Xiaoyu Zhang;Guoping Qin;Hong Zhang;Wanjun Li;Haibo Ruan;Liang Fang;Cunzhu Tong;Chunyang Kong
ZnO: in - n薄膜的固有缺陷可以通过多步退火与环境气氛相结合来有效调节。相应的，薄膜的电导率由ntop型→ton型依次变化（n→p→n）。实验结果表明，通过x射线衍射（XRD）分析，在n2mo环境下，在600°C下退火8min，可以得到高质量的薄膜，并且从拉曼光谱和光致发光（PL）光谱中，供体缺陷（Zni， VO）的浓度显著降低。当膜在空气中进一步退火3min时，氧间质（Oi）等受体的浓度略有增加。同时，从相对x射线光电子能谱（XPS）峰面积比P1（395.5 eV）和P2（397.3 eV）到P3（403.5 eV）的结果看，薄膜中n相关受体配合物主要被激活，这对实现znop型电导率的转化起着重要作用。可以得到空穴浓度为1017cm−3的p型ZnO: in - n薄膜。
The intrinsic defects in ZnO:In-N films can be regulated efficiently by multiple-step annealing together with the ambient atmosphere. Correspondingly, the conductivity of films changes fromntop-type, then ton-type (n→p→n). The experimental results indicate high-quality films annealed at 600 °C for 8 min in N2ambience can be obtained by the analysis of X-ray diffraction (XRD) patterns and the concentrations of donor defects (Zni, VO) are dramatically decreased from Raman and photoluminescence (PL) spectra. When the films are further annealed in air for 3 min, the concentrations of acceptors such as oxygen interstitials (Oi) are increased slightly. Meanwhile, N-related acceptor complexes in the films are dominantly activated in terms of relative X-ray photoelectron spectroscopy (XPS) peak area ratio of P1(395.5 eV) and P2(397.3 eV) to P3(403.5 eV), which plays an important role in realizing the conversion of the ZnOp-type conductivity. Noted that thep-type ZnO:In-N films with the hole concentration of 1017cm−3can be obtained in this way.
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