Fatigue life evaluation for single‐ and poly‐crystalline silicon films by pulsating‐tension cyclic loading test
Fatigue life evaluation for single‐ and poly‐crystalline silicon films by pulsating‐tension cyclic loading test
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脉动拉伸循环加载试验评价单晶硅薄膜和多晶硅薄膜的疲劳寿命
DOI：
10.1002/sia.2820
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发表时间：
2008
影响因子：
1.7
通讯作者：
S. Inoue
中科院分区：
文献类型：
--
作者：
Y. Nagai;T. Namazu;S. Inoue
本文介绍了微机电系统（MEMS）中使用的微尺度单晶硅（SCS）和多晶硅（PCS）的疲劳寿命。制造的SCS和PCS样本（标称尺寸为20 µm宽、600 µm长和2 µm厚）在标距部分通过脉冲-拉伸疲劳试验在1至10 Hz的恒定频率下承受循环载荷。通过准静态拉伸试验测得的SCS和PCS样本的平均断裂强度分别为3.26和2.08 GPa，用作疲劳试验中的参考应力。在疲劳试验中，两个试样的峰值应力和应力幅保持恒定。失效循环次数随着峰值应力的降低而增加。在两个样本中均未观察到明显的疲劳极限。应力比参数σpeak/σf与失效循环次数有很好的相关性，与PCS试样相比，SCS试样的寿命数据分散性较大。扫描电子显微镜（SEM）表明，一些潜在的内部或表面上的试样的缺陷会影响分散的疲劳寿命。版权所有© 2008约翰威利父子有限公司。
This paper describes the fatigue life of microscale single‐crystalline silicon (SCS) and poly‐crystalline silicon (PCS) used in microelectromechanical systems (MEMSs). The fabricated SCS and PCS specimens having nominal dimensions of 20 µm in width, 600 µm in length, and 2 µm in thickness at the gauge section were subjected to cyclic loading by means of pulsating‐tension fatigue test under a constant frequency from 1 to 10 Hz. The average fracture strengths of the SCS and PCS specimens measured by quasi‐static tensile test were 3.26 and 2.08 GPa, respectively, which were utilized as the reference stresses in the fatigue test. In the fatigue test, the peak stress and stress amplitude were maintained constant for both the specimens. The number of cycles to failure increased with a decrease in the peak stress. No manifest fatigue limit was observed in both the specimens. The stress ratio parameter, σpeak/σf, gave a good correlation with the number of cycles to failure, and a large scatter of the lifetime data in the SCS specimens was found as compared with the PCS specimens. Scanning electron microscopy (SEM) suggested that a number of latent defects inside or on the surface of the specimen would have influenced the scatter of the fatigue life. Copyright © 2008 John Wiley & Sons, Ltd.
通过 XRD 拉伸测试测量多晶氮化钛薄膜的机械性能
DOI：
--
发表时间：
2005
期刊：
IEEJ Transactions on Sensors and Micromachines 125・9
影响因子：
--
作者：
Takahiro Namazu;Shozo Inoue;Hideki Takemoto;Keiji Koterazawa
通讯作者：
Keiji Koterazawa