A $W$ -Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques
A $W$ -Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques
复制标题
基于下变频技术的$W$带晶圆上有源负载牵引系统
DOI:
10.1109/tmtt.2013.2292042
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发表时间:
2014
影响因子:
4.3
通讯作者:
C. Bolognesi
中科院分区:
文献类型:
--
作者:
V. Teppati;H. Benedickter;D. Marti;M. Garelli;S. Tirelli;R. Lovblom;R. Fluckiger;M. Alexandrova;O. Ostinelli;C. Bolognesi
A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients ΓL as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W-band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented.
影响因子:
3
作者:
Chong Li;L. B. Lok;A. Khalid;I. Thayne;D. Cumming
通讯作者:
Chong Li;L. B. Lok;A. Khalid;I. Thayne;D. Cumming