A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture
A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture
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采用频率梳架构、采用 65 nm CMOS 的 220 至 320 GHz FMCW 雷达
DOI：
10.1109/jssc.2020.3020291
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发表时间：
2021
影响因子：
5.4
通讯作者：
Han, Ruonan
中科院分区：
文献类型：
--
作者：
Yi, Xiang;Wang, Cheng;Chen, Xibi;Wang, Jinchen;Grajal, Jesus;Han, Ruonan
提出了一种基于CMOS的太赫兹（THz）频率梳结构超宽带调频连续波（FMCW）雷达。这种架构提供的高并行度频谱感测显著降低了THz前端电路的带宽要求，并确保在整个工作频带内保持峰值输出功率和灵敏度。梳状系统还提高了频率啁啾的速度和线性度。采用基于平方混频器优先架构的天线共享方案，不仅尺寸紧凑，而且方便多通道雷达中频数据的拼接。为了避免在片上宽带辐射中使用高成本的硅透镜，提出了一种多谐振基片集成波导（SIW）天线结构，该结构提供了15%的部分带宽用于阻抗匹配。作为概念验证，演示了一个无缝扫描整个220至320 GHz频段的五音雷达原型。在测量中，多通道聚合的等效各向同性辐射功率（EIRP）为0.6 dBm，并进一步提高到约20 dBm的TPX（聚甲基戊烯）透镜。接收机的实测最小单边带噪声系数（SSB NF）为22.8 dB，包括天线损耗和基带放大器。由于采用梳状结构，在100 GHz带宽范围内，EIRP和NF值的波动分别仅为8.8 dB和14.6 dB。芯片尺寸为5 mm2，功耗为840 mW。这项工作标志着THz雷达的第一个CMOS演示，并在所有雷达前端芯片中实现了创纪录的带宽和测距分辨率。
This article presents a CMOS-based, ultra-broadband frequency-modulated continuous-wave (FMCW) radar using a terahertz (THz) frequency-comb architecture. The high-parallelism spectral sensing provided by this architecture significantly reduces the bandwidth requirement for the THz front-end circuitry and ensures that the peak output power and sensitivity are maintained across the entire band of operation. The speed and linearity of frequency chirping are also improved by the comb system. An antenna-sharing scheme based on a square-mixer-first architecture is used, which not only leads to compact size but also facilitates the stitching of the multichannel radar IF data. To avoid the usage of high-cost silicon lens in the on-chip broadband radiation, a multi-resonance substrate-integrated-waveguide (SIW) antenna structure is innovated, which provides 15% fractional bandwidth for impedance matching. As a proof of concept, a five-tone radar prototype that seamlessly scans the entire 220-to-320-GHz band is demonstrated. In the measurement, the multi-channel-aggregated equivalent-isotropically radiated power (EIRP) is 0.6 dBm and is further boosted to ~20 dBm with a TPX (polymethylpentene) lens. The measured minimum single-sideband noise figure (SSB NF) of the receiver, including the antenna loss and baseband amplifier, is 22.8 dB. Due to the comb architecture, the EIRP and NF values fluctuate by only 8.8 and 14.6 dB, respectively, across the 100-GHz bandwidth. The chip has a die size of 5 mm2and consumes 840 mW of dc power. This work marks the first CMOS demonstration of THz radar and achieves record bandwidth and ranging resolution among all radar front-end chips.
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