Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection.
Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection.
复制标题
窄带隙氧化物纳米颗粒与石墨烯耦合用于高性能中红外光电检测
DOI：
10.1038/s41467-018-06776-z
复制
发表时间：
2018-10-16
影响因子：
16.6
通讯作者：
Wang QJ
中科院分区：
文献类型：
--
作者：
Yu X;Li Y;Hu X;Zhang D;Tao Y;Liu Z;He Y;Haque MA;Liu Z;Wu T;Wang QJ
对在中红外区域工作的光电器件的追求是由基本利益和从成像、传感到通信的设想应用驱动的。尽管传统半导体不断取得成就，但众所周知的障碍，如复杂的生长过程和低温操作，阻碍了红外探测器的使用。作为实现高性能光电探测器的替代途径，半导体/石墨烯混合结构已被深入探索。然而，这样的光电探测器的操作带宽已被限制到可见光和近红外区域。在这里，我们展示了一个中红外混合光电探测器，它通过将石墨烯与窄带隙半导体Ti 2 O3（Eg= 0.09 eV）耦合实现，在高达10 µm的宽带波长范围内实现了300 A W− 1的高响应度。所获得的响应率比商业中红外光电探测器高约两个数量级。我们的工作开辟了一条实现中红外区高性能光电子学的途径。
The pursuit of optoelectronic devices operating in the mid-infrared regime is driven by both fundamental interests and envisioned applications ranging from imaging, sensing to communications. Despite continued achievements in traditional semiconductors, notorious obstacles such as the complicated growth processes and cryogenic operation preclude the usage of infrared detectors. As an alternative path towards high-performance photodetectors, hybrid semiconductor/graphene structures have been intensively explored. However, the operation bandwidth of such photodetectors has been limited to visible and near-infrared regimes. Here we demonstrate a mid-infrared hybrid photodetector enabled by coupling graphene with a narrow bandgap semiconductor, Ti2O3(Eg= 0.09 eV), which achieves a high responsivity of 300 A W−1in a broadband wavelength range up to 10 µm. The obtained responsivity is about two orders of magnitude higher than that of the commercial mid-infrared photodetectors. Our work opens a route towards achieving high-performance optoelectronics operating in the mid-infrared regime.
登录
查看更多内容
影响因子：
35
作者：
Keuleyan, Sean;Lhuillier, Emmanuel;Guyot-Sionnest, Philippe
通讯作者：
Guyot-Sionnest, Philippe
影响因子：
38.3
作者：
Das, A.;Pisana, S.;Sood, A. K.
通讯作者：
Sood, A. K.
影响因子：
10.8
作者：
Furchi M;Urich A;Pospischil A;Lilley G;Unterrainer K;Detz H;Klang P;Andrews AM;Schrenk W;Strasser G;Mueller T
通讯作者：
Mueller T
斜方 Ti2O3：一种多晶型相关的窄带隙铁磁氧化物
影响因子：
19
作者：
Li, Yangyang;Weng, Yakui;Wu, Tom
通讯作者：
Wu, Tom
影响因子：
38.3
作者：
Konstantatos, Gerasimos;Badioli, Michela;Koppens, Frank H. L.
通讯作者：
Koppens, Frank H. L.