B-site acceptor doped AgNbO3 lead-free antiferroelectric ceramics: The role of dopant on microstructure and breakdown strength
B-site acceptor doped AgNbO3 lead-free antiferroelectric ceramics: The role of dopant on microstructure and breakdown strength
复制标题
B位受主掺杂AgNbO3无铅反铁电陶瓷：掺杂剂对微观结构和击穿强度的作用
DOI：
10.1016/j.ceramint.2020.09.222
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发表时间：
2020-09
影响因子：
5.2
通讯作者：
Chen Yang
中科院分区：
文献类型：
--
作者：
Xin Wang;Pengrong Ren;Dong Ren;Linfeng Xie;Tingting Li;Junqi Xu;Yingxue Xi;Chen Yang
制备了名义成分为Ag（Nb_（1-x）Mx）O_（3-x/2）（x = 0.01，M = Ti，Zr和Hf）的B位异价改性AgNbO_3。研究了掺杂对材料的微结构、介电、铁电和导电性能的影响。结果表明，受主掺杂的引入不会导致晶粒粗化。Zr ~（4+）和Hf ~（4+）的掺杂有利于稳定AgNbO_3的反铁电相。在所有样品中，Ti ~（4+）掺杂的AgNbO_3的电阻率最小，而Hf ~（4+）掺杂的AgNbO_3的电阻率最大，因此，Hf ~（4+）掺杂的AgNbO_3具有较高的BDS。XPS分析结果表明，导电行为与氧空位浓度有关。这项工作表明，受主掺杂剂也是有效的AgNbO 3基陶瓷的微观结构控制和化学改性。
B-site aliovalent modification of AgNbO3with a nominal composition of Ag(Nb1-xMx)O3-x/2(x = 0.01, M = Ti, Zr and Hf) was prepared. The effects of dopants on microstructure, dielectric, ferroelectric and conduction properties were investigated. The results indicate that the introduction of acceptor dopant does not lead to grain coarsening. Zr4+and Hf4+doping are beneficial to stabilize the antiferroelectric phase of AgNbO3. Among all the samples, Ti4+doped AgNbO3has the minimum resistivity while Hf4+doped AgNbO3has the maximum resistivity, therefore, Hf4+doped AgNbO3has high BDS. The XPS results indicate that the conduction behaviour is associated with the concentration of oxygen vacancies. This work hints that acceptor dopant is also effective on the microstructure control and chemical modification of AgNbO3-based ceramics.
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影响因子：
11.9
作者：
Yan Zhongna;Zhang Dou;Zhou Xuefan;Qi He;Luo Hang;Zhou Kechao;Abrahams Isaac;Yan Haixue
通讯作者：
Yan Haixue
影响因子：
5.7
作者：
Pengrong Ren;Dong Ren;Liang Sun;Fuxue Yan;Shu Yang;Gaoyang Zhao
通讯作者：
Pengrong Ren;Dong Ren;Liang Sun;Fuxue Yan;Shu Yang;Gaoyang Zhao
A位/B位共掺杂AgNbO3无铅反铁电陶瓷的超高储能密度：洞察反铁电的起源
影响因子：
11.9
作者：
Han, Kai;Luo, Nengneng;Wei, Yuezhou
通讯作者：
Wei, Yuezhou
影响因子：
3.9
作者：
Steiner, Sebastian;Seo, In-Tae;Froemling, Till
通讯作者：
Froemling, Till
影响因子：
3.9
作者：
M. Valant;D. Suvorov
通讯作者：
M. Valant;D. Suvorov