Manipulation of film quality and magnetic properties of CrO(2) (100) films on TiO(2) substrates with carrier gas and growth temperature.
Manipulation of film quality and magnetic properties of CrO(2) (100) films on TiO(2) substrates with carrier gas and growth temperature.
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利用载气和生长温度控制 TiO2 基底上 CrO2 (100) 薄膜的薄膜质量和磁性能
DOI：
10.1039/c7ra10874e
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发表时间：
2018-01-02
期刊：
影响因子：
3.9
通讯作者：
Xiong, Rui
中科院分区：
文献类型：
--
作者：
Cheng, Ming;Lu, Zhihong;Zhang, Zhenhua;Yu, Ziyang;Liu, Shuo;Chen, Changwei;Li, Yuting;Liu, Yong;Shi, Jin;Xiong, Rui
采用化学气相沉积法，在不同温度下，分别在氩气和氮气气氛下，在TiO 2（100）衬底上制备了高质量的CrO 2薄膜。结果表明，以Ar或N2为载气时，CrO 2薄膜的生长温度下限可分别降低到310或300 °C。因此，在更大的温度范围内（Ar中为310-400 °C，N2中为300 - 430 °C，而O2中为390-410 °C）优化生长温度可以提高CrO 2薄膜的质量，这对CrO 2薄膜的实际应用具有重要意义。在Ar或N2气氛中，在320 °C时，CrO 2膜的取向分布最窄，粗糙度最低，膜层质量最好。与在O2中生长的薄膜相比，在Ar中生长的薄膜被发现具有更大的饱和磁化强度（Ms）和磁各向异性，这可能是由于大量的O空位。在N2中生长的膜实际上是N掺杂的膜，并且具有比在O2中生长的膜更低的Ms。居里温度（Tc）也通过载气和生长温度来调节。在Ar或N2中生长的膜通常比在O2中生长的膜具有更高的Tc值。此外，发现当使用N2作为载气时，薄膜的热稳定性显著提高。
High-quality CrO2 films were synthesized on TiO2 (100) substrates at different temperatures using the chemical vapor deposition method in argon or nitrogen atmosphere. It was found that the lower limit for the growth temperature of CrO2 films can be reduced to 310 or 300 °C when using Ar or N2 as the carrier gas, respectively. The quality of CrO2 film on TiO2 substrate can thus be improved by optimizing growth temperature in a much larger range (310–400 °C in Ar and 300–430 °C in N2, in contrast with 390–410 °C in O2), which is significant for the practical application of CrO2 films. The best film quality was achieved at 320 °C in either Ar or N2 atmosphere, at which CrO2 film has its narrowest orientation distribution and lowest roughness. Compared to films grown in O2, films grown in Ar were found to have larger saturation magnetizations (Ms) and magnetic anisotropies, possibly due to numerous O vacancies. Films grown in N2 are actually N-doped films, and have lower Ms than those grown in O2. The Curie temperature (Tc) was also tuned by the carrier gas and growth temperature. Films grown in Ar or N2 generally have a higher Tc value than those grown in O2. Furthermore, the thermal stability of the films was found to be remarkably improved when using N2 as the carrier gas.
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影响因子：
2.1
作者：
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通讯作者：
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影响因子：
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作者：
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