Post-CMOS integration technology of thick-film SOI MEMS devices using micro bridge interconnections
Post-CMOS integration technology of thick-film SOI MEMS devices using micro bridge interconnections
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使用微桥互连的厚膜 SOI MEMS 器件的后 CMOS 集成技术
DOI：
10.1109/memsys.2008.4443667
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
M. Ishida
中科院分区：
文献类型：
--
作者：
H. Takao;T. Ichikawa;T. Nakata;K. Sawada;M. Ishida
本文报道了一种新的后CMOS工艺集成厚（>10 μ m）SOI MEMS器件后，标准的CMOS工艺，这只需要三个额外的光掩模步骤。附加的MEMS工艺对于集成CMOS器件来说并不严格和关键。在该技术中，高深宽比的SOI MEMS器件和CMOS集成电路通过批处理制造的“微桥互连”电连接。金属互连被放置在氧化物桥结构上，该氧化物桥结构连接在厚SOI晶片的有源层中的电隔离的CMOS区域和MEMS区域之间，以便将MEMS电极连接到CMOS电路中的端子。该工艺可广泛应用于厚SOI基片上单片CMOS/MEMS的高密度集成。
This paper reports a new post-CMOS process to integrate thick (>10 mum) SOI MEMS devices after standard CMOS process, which requires only three additional photomask steps. The additional MEMS processes are not severe and critical for the integrated CMOS devices. In this technology, high aspect ratio SOI MEMS devices and CMOS integrated circuits are electrically connected with 'micro bridge interconnection' fabricated by batch processing. Metal interconnections are placed on oxide bridge structures that are connecting between electrically isolated CMOS areas and MEMS areas in active layer of thick SOI wafer in order to connect the MEMS electrodes to terminals in CMOS circuits. This fabrication technology can be applicable widely to high-dense integration of monolithic CMOS/MEMS on thick-SOI wafers.
由带扣桥和垂直梳状驱动执行器构成的三维SOI-MEMS
DOI：
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发表时间：
2004
期刊：
IEEE Journal of Selected Topics Quantum Electronics 10
影响因子：
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作者：
M.Sasaki;D.Briand;W.Noell;N.de Rooij;K.Hane
通讯作者：
K.Hane