Optimization of exchange bias in Co2FeAl0.5Si0.5 Heusler alloy layers
Optimization of exchange bias in Co2FeAl0.5Si0.5 Heusler alloy layers
复制标题
Co2FeAl0.5Si0.5 Heusler 合金层交换偏压的优化
DOI：
10.1063/1.4868601
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发表时间：
2014
影响因子：
3.2
通讯作者：
Hirohata A
中科院分区：
文献类型：
--
作者：
Hirohata A
我们已经制备和研究了IrMn{sub3}/Co{sub2}FeAl{sub0.5}Si{sub0.5}堆栈，以满足未来自旋电子器件应用的标准，这些应用需要低温结晶(<；250 °C)和大交换偏置H{subex}(>；500 Oe)。这样的系统将在自旋阀或隧道结应用中形成钉扎层。我们证明了在300 °C的温度下，可以在Co{sub2}FeAl{sub0.5}Si{sub0.5}层中实现晶态有序化，从而使∼的饱和磁化强度达到预测的80%。我们还在界面处诱导了∼240 Oe的交换偏置。这些值接近上述标准，证实了在当前的硅基工艺中使用反铁磁体/Heusler合金堆栈的潜力。
We have fabricated and investigated IrMn{sub 3}/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} stacks to meet the criteria for future spintronic device applications which requires low-temperature crystallisation (<250 °C) and a large exchange bias H{sub ex} (>500 Oe). Such a system would form the pinned layer in spin-valve or tunnel junction applications. We have demonstrated that annealing at 300 °C which can achieve crystalline ordering in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layer giving ∼80% of the predicted saturation magnetisation. We have also induced an exchange bias of ∼240 Oe at the interface. These values are close to the above criteria and confirm the potential of using antiferromagnet/Heusler-alloy stacks in current Si-based processes.
界面结构对交换偏压赫斯勒合金薄膜的影响
影响因子：
2.1
作者：
H. Endo;A. Hirohata;J. Sagar;L. Fleet;T. Nakayama;K. O’Grady
通讯作者：
K. O’Grady