Preparation, electrical, thermal and mechanical properties of black lithium tantalate crystal wafers
Preparation, electrical, thermal and mechanical properties of black lithium tantalate crystal wafers
复制标题
黑色钽酸锂晶体片的制备及其电学、热学和力学性能
DOI：
10.1007/s10854-020-04193-x
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发表时间：
2020-08
期刊：
影响因子：
--
通讯作者：
Xuefeng Zhang
中科院分区：
文献类型：
--
作者：
Xuefeng Xiao;Huan Zhang;Xuefeng Zhang
以高纯铝粉和硅粉为还原剂，通过比较同组分钽酸锂(CLT)晶片和深还原黑色钽酸锂(BLT)晶片，研究了表面还原处理对钽酸锂(LiTaO_3，LT)晶片电学、热学和力学性能的影响。用X射线衍射仪分析了还原后晶片的结构变化。BLT晶片的电导率为6.27 × 10-12(Ω)−1，比CLT晶片高出4个数量级。居里温度和热稳定性与CLT晶片基本相同，比热和硬度有所降低。数据表明，压下前的高温退火有利于CLT晶片的应力释放，发黑效果更容易实现，处理后的BLT晶片更抗静电。结果表明，还原处理可以明显提高硅片的导电性，从而更容易改善和消除器件制备过程中热释电效应引起的放电现象。
In this work, the effect of surface reduction treatment on the electrical, thermal and mechanical properties of Lithium tantalate (LiTaO3, LT) crystal wafers was investigated by comparing congruent Lithium tantalate (CLT) crystal wafers with deep-reduction black Lithium tantalate (BLT) crystal wafers using a mixture of high-purity aluminium powder and silicon powder as reducing agents. The structural changes of reduced wafers are discussed by XRD. The electrical conductivity of BLT wafers is 6.27 × 10–12(Ω cm)−1, which is four orders of magnitude higher than the CLT crystal wafers. The Curie temperature and the thermal stability are basically the same with CLT crystal wafers, and the specific heat and hardness are reduced. The data show that high temperature annealing before reduction is conducive to the stress release of CLT crystal wafers, the blackening effect is more easily achieved, and the treated BLT wafer is more anti-static. The results show that the reduction treatment can obviously improve the conductivity of the wafer, so it is easier to improve and eliminate the discharge phenomenon caused by pyroelectric effects in the process of device preparation.
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影响因子：
4.6
作者：
J. Wu;Z. B. Chen;R. Choubey;C. Lan
通讯作者：
J. Wu;Z. B. Chen;R. Choubey;C. Lan
球形纳米压痕研究LiTaO3单晶的室温蠕变行为及其与长度尺度的相关性
影响因子：
3.4
作者：
Hang, Wei;Huang, Xianwei;Ma, Yi
通讯作者：
Ma, Yi
DOI：
10.1088/0022-3727/49/19/195005
发表时间：
2016-04
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Tao Yan;N. Ye;Liuwei Xu;Y. Sang;Yanxue Chen;Wei Song;X. Long;Ji-yang Wang;Hong Liu
通讯作者：
Tao Yan;N. Ye;Liuwei Xu;Y. Sang;Yanxue Chen;Wei Song;X. Long;Ji-yang Wang;Hong Liu
纳米压痕法研究 LiTaO3 单晶的室温蠕变行为和位错成核激活体积
影响因子：
3.4
作者：
Ma, Yi;Huang, Xianwei;Zhang, Taihua
通讯作者：
Zhang, Taihua
影响因子：
3.2
作者：
P. Bordui;D. Jundt;E. M. Standifer;R. Norwood;R. Sawin;J. Galipeau
通讯作者：
P. Bordui;D. Jundt;E. M. Standifer;R. Norwood;R. Sawin;J. Galipeau