High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment.
High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment.
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DOI：
10.1126/sciadv.aat5780
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发表时间：
2018-09
期刊：
影响因子：
13.6
通讯作者：
Gleason KK
中科院分区：
文献类型：
--
作者：
Wang X;Zhang X;Sun L;Lee D;Lee S;Wang M;Zhao J;Shao-Horn Y;Dincă M;Palacios T;Gleason KK
我们提出了一种具有高导电性和载流子迁移率的结构工程空气稳定导电聚合物。空气稳定、重量轻、导电的聚合物是下一代电子设备的电极。然而，聚合物的低导电性和低载流子迁移率是限制其采用的关键瓶颈。我们证明，解决这些限制的关键是分子工程的结晶和聚合物的形态。我们使用氧化化学气相沉积（oCVD）和氢溴酸处理作为实现导电聚合物聚（3,4-乙烯二氧噻吩）（PEDOT）工程的有效工具。我们证明了PEDOT薄膜具有创纪录的6259 S/cm的高电导率和18.45 cm2 V−1 S−1的载流子迁移率，通过使用oCVD诱导晶体构型转变。随后的理论建模揭示了这些薄膜的金属性质和有效降低了这些薄膜中结晶域之间的载流子输运能垒。为了验证这种金属性质，我们成功地制造了工作在13.56 MHz的PEDOT-Si肖特基二极管阵列，用于射频识别（RFID）阅读器，展示了与传统互补金属氧化物半导体（CMOS）技术兼容的晶圆级制造。具有超高导电性和高载流子迁移率的oCVD PEDOT薄膜在具有低能耗和更好的载流子输运性能的新型高速有机电子器件中具有很大的前景。
We present a structural engineered air-stable conducting polymer with high electrical conductivity and carrier mobility. Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is to molecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin films with a record-high electrical conductivity of 6259 S/cm and a remarkably high carrier mobility of 18.45 cm2 V−1 s−1 by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstrating wafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.
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影响因子：
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