Silicon films with gallium-rich nanoinclusions: from superconductor to insulator
Silicon films with gallium-rich nanoinclusions: from superconductor to insulator
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具有富镓纳米夹杂物的硅薄膜：从超导体到绝缘体
DOI：
10.1088/1367-2630/15/8/083022
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发表时间：
2013
影响因子：
3.3
通讯作者：
M. Helm
中科院分区：
文献类型：
--
作者：
V. Heera;J. Fiedler;R. Hübner;B. Schmidt;M. Voelskow;W. Skorupa;R. Skrotzki;T. Herrmannsdörfer;J. Wosnitza;M. Helm
在热氧化硅片上溅射的硅膜通过SiO_2盖层离子注入富集了Ga。研究了这些薄膜在快速热退火后的形貌和电输运特性。非晶态、富Ga的纳米夹杂物嵌入在纳米晶硅基质中。金属纳米夹杂物在7K以下变成超导，它们与重掺杂的硅微晶形成一个随机的结网络。对结特性的微小修改，例如通过退火或电流脉冲，可以显著地改变薄膜中的电子传输。富镓硅薄膜显示出丰富的低温输运现象，到目前为止，人们只知道颗粒金属或高温超导体的低温输运现象：超导体-绝缘体转变、准重入超导电性和电流控制方块电阻。利用微电子兼容技术制备和修饰富镓硅薄膜的可能性使其对纳米结构、无序超导体中输运现象的基础研究以及超导电路与硅器件的集成都很有意义。
Si films sputter deposited on thermally oxidized Si are enriched with Ga by ion implantation through a SiO2 capping layer. The morphology and the electrical transport properties of these films are investigated after rapid thermal annealing. Amorphous, Ga-rich nanoinclusions are embedded in a nanocrystalline Si matrix. The metallic nanoinclusions become superconducting below 7 K. They form a random network of junctions to heavily doped Si crystallites. Small modifications of the junction properties, e.g. by annealing or current pulses, can dramatically change the electronic transport in the film. Ga-rich Si films show a wealth of low-temperature transport phenomena, which have been known until now only from granular metals or high-temperature superconductors: superconductor–insulator transition, quasi-reentrant superconductivity and current-controlled sheet resistance. The possibility to prepare and modify Ga-rich Si films with microelectronics-compatible technology makes them interesting for both fundamental research on transport phenomena in nanostructured, disordered superconductors as well as for the integration of superconducting circuits into Si devices.
影响因子：
3.7
作者：
Fischer;Pronin;Skrotzki;Herrmannsdörfer;Wosnitza;Fiedler;Schachinger
通讯作者：
Schachinger
影响因子：
4
作者：
Fiedler;Voelskow;Mücklich;Skrotzki;Herrmannsdörfer;Skorupa
通讯作者：
Skorupa