Study for Laser Controlled Fabrication of Micro/Nano-Structures of Silicon Based on Multi-Physics Model.

Study for Laser Controlled Fabrication of Micro/Nano-Structures of Silicon Based on Multi-Physics Model.
复制标题

基于多物理模型的激光控制硅微纳结构制造研究

DOI:
10.3390/mi12050528
复制
发表时间:
2021-05-07
期刊:
影响因子:
3.4
通讯作者:
Chen C
Chen C
中科院分区:
工程技术3区
文献类型:
--
作者:
Wu L;Chen J;Zhang L;Wang H;Chen C

文献摘要

参考文献

相似文献

本文提出了一种与温度场相关的微/纳米结构表面改性的详细过程。本文采用飞秒激光诱导硅衬底表面形貌。我们提供了一种新的方法,通过控制硅表面形貌的纵横比的微/纳米悬臂梁探针的制造。采用数值方法研究了早期扰动对后期结构的力学行为。扩散界面模型描述的演变,并提供了一个通用的框架。通过实验验证了飞秒激光控制表面形貌的理论模型。对于系统的研究,该模型包括界面能和扩散动力学。该方法为提高微纳悬臂梁传感器的灵敏度提供了一种有效途径。
This work proposes a detailed process of micro/nano-structure surface modification in relation to temperature field. In this paper, a femtosecond laser is used to induce the surface morphology of a silicon substrate. We provide a new method for the fabrication of a micro/nano-cantilever probe by controlling the aspect ratio of the silicon surface morphology. A computational method is used to investigate the mechanical behaviors of early perturbation to late-stage structure. A diffuse interface model is employed to describe the evolution and provide a general framework. The theoretical model of femtosecond laser control surface morphology is verified by the experiments. For systematic study, the model involves the interface energy and kinetics of diffusion. This method provides an effective way to improve the sensitivity of micro/nano-cantilever sensors.
DOI: 10.1103/physrevb.73.193409
发表时间: 2006-05-01
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者:
Chiu, C. -H.;Huang, Z.;Poh, C. T.
通讯作者: Poh, C. T.
DOI: 10.1016/j.apsusc.2007.01.101
发表时间: 2007-05-30
影响因子: 6.7
作者:
Lingenfelser, Dominic;Hess, Peter
通讯作者: Hess, Peter
DOI: 10.3788/col201513.062201
发表时间: 2015-06-10
影响因子: 3.5
作者:
Meng, Fantong;Hu, Jie;Wang, Qingsong
通讯作者: Wang, Qingsong
DOI: 10.1109/jstqe.2016.2614183
发表时间: 2017-05-01
影响因子: 4.9
作者:
Bonse, Joern;Hoehm, Sandra;Krueger, Joerg
通讯作者: Krueger, Joerg
DOI: 10.1021/acs.nanolett.7b05035
发表时间: 2018-03-01
期刊: NANO LETTERS
影响因子: 10.8
作者:
Heritier, M.;Eichler, A.;Degen, C. L.
通讯作者: Degen, C. L.