Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS2

Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS2
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揭示 CVD 生长的单层 WS2 中异常低频拉曼模式的起源

DOI:
10.1007/s12274-021-3769-1
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发表时间:
2021-08
期刊:
影响因子:
9.9
通讯作者:
Jin Yuqi
Jin Yuqi
中科院分区:
材料科学1区
文献类型:
--
作者:
Xiang Qian;Yue Xiaofei;Wang Yanlong;Du Bin;Chen Jiajun;Zhang Shaoqian;Li Gang;Cong Chunxiao;Yu Ting;Li Qingwei;Jin Yuqi

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二维过渡金属二硫属化合物(TMD)的许多有前途的功能和令人兴奋的潜在应用的科学探索提供了必要的支持衬底。为了利用衬底工程来改变2D TMD的性质并避免引入不希望的不利影响,已经使用各种实验技术(例如高频拉曼光谱)来理解2D TMD与衬底之间的相互作用。然而,由于缺乏对2D TMD-基底相互作用敏感的技术的系统研究,2D TMD中的样品-基底相互作用尚未完全理解。利用对二硫化钨(WS 2)与基底相互作用非常敏感的低频拉曼光谱,系统地研究了WS 2单分子膜与基底之间的相互作用。化学气相沉积(CVD)生长的单层WS 2通过其低波数界面模式清楚地揭示了与衬底的强耦合。结果表明,增强的样品-衬底相互作用导致单层WS 2上产生拉伸应变,这种拉伸应变是在CVD生长的冷却过程中产生的,可以在转移后或通过机械剥离等无退火方法制备单层WS 2样品时释放。这些结果不仅表明了低频拉曼光谱探测样品-衬底相互作用的有效性,在2D TMD,但也提供了指导的高性能器件的设计与所需的样品-衬底耦合强度的基础上的2D TMD。
Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize substrate engineering to alter the properties of 2D TMDs and avoid introducing unwanted adverse effects, various experimental techniques, such as high-frequency Raman spectroscopy, have been used to understand the interactions between 2D TMDs and substrates. However, sample-substrate interaction in 2D TMDs is not yet fully understood due to the lack of systematic studies by techniques that are sensitive to 2D TMD-substrate interaction. This work systematically investigates the interaction between tungsten disulfide (WS2) monolayers and substrates by low-frequency Raman spectroscopy, which is very sensitive to WS2-substrate interaction. Strong coupling with substrates is clearly revealed in chemical vapor deposition (CVD)-grown monolayer WS2by its low-wavenumber interface mode. It is demonstrated that the enhanced sample-substrate interaction leads to tensile strain on monolayer WS2, which is induced during the cooling process of CVD growth and could be released for monolayer WS2sample after transfer or fabricated by an annealing-free method such as mechanical exfoliation. These results not only suggest the effectiveness of low-frequency Raman spectroscopy for probing sample-substrate interactions in 2D TMDs, but also provide guidance for the design of high-performance devices with the desired sample-substrate coupling strength based on 2D TMDs.
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