Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS2
Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS2
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揭示 CVD 生长的单层 WS2 中异常低频拉曼模式的起源
DOI:
10.1007/s12274-021-3769-1
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发表时间:
2021-08
期刊:
影响因子:
9.9
通讯作者:
Jin Yuqi
中科院分区:
文献类型:
--
作者:
Xiang Qian;Yue Xiaofei;Wang Yanlong;Du Bin;Chen Jiajun;Zhang Shaoqian;Li Gang;Cong Chunxiao;Yu Ting;Li Qingwei;Jin Yuqi
Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize substrate engineering to alter the properties of 2D TMDs and avoid introducing unwanted adverse effects, various experimental techniques, such as high-frequency Raman spectroscopy, have been used to understand the interactions between 2D TMDs and substrates. However, sample-substrate interaction in 2D TMDs is not yet fully understood due to the lack of systematic studies by techniques that are sensitive to 2D TMD-substrate interaction. This work systematically investigates the interaction between tungsten disulfide (WS2) monolayers and substrates by low-frequency Raman spectroscopy, which is very sensitive to WS2-substrate interaction. Strong coupling with substrates is clearly revealed in chemical vapor deposition (CVD)-grown monolayer WS2by its low-wavenumber interface mode. It is demonstrated that the enhanced sample-substrate interaction leads to tensile strain on monolayer WS2, which is induced during the cooling process of CVD growth and could be released for monolayer WS2sample after transfer or fabricated by an annealing-free method such as mechanical exfoliation. These results not only suggest the effectiveness of low-frequency Raman spectroscopy for probing sample-substrate interactions in 2D TMDs, but also provide guidance for the design of high-performance devices with the desired sample-substrate coupling strength based on 2D TMDs.
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影响因子:
4.6
作者:
O'Brien M;McEvoy N;Hanlon D;Hallam T;Coleman JN;Duesberg GS
通讯作者:
Duesberg GS
影响因子:
17.1
作者:
Ming Xia;Bo Li;K. Yin;G. Capellini;Gang Niu;Y. Gong;Wu Zhou;P. Ajayan;Yahong Xie
通讯作者:
Ming Xia;Bo Li;K. Yin;G. Capellini;Gang Niu;Y. Gong;Wu Zhou;P. Ajayan;Yahong Xie
影响因子:
3.7
作者:
Yanyuan Zhao;Xin Luo;Jun Zhang;Junxiong Wu;X. Bai;Meiqian Wang;J. Jia;H. Peng;Zhongfan Liu;S. Y. Quek;Q. Xiong
通讯作者:
Yanyuan Zhao;Xin Luo;Jun Zhang;Junxiong Wu;X. Bai;Meiqian Wang;J. Jia;H. Peng;Zhongfan Liu;S. Y. Quek;Q. Xiong
影响因子:
17.1
作者:
Wang, Xingli;Gong, Yongji;Ajayan, Pulickel M.
通讯作者:
Ajayan, Pulickel M.
DOI:
10.1038/s41377-020-00421-5
发表时间:
2020-11-23
期刊:
Light, science & applications
影响因子:
--
作者:
Peng Z;Chen X;Fan Y;Srolovitz DJ;Lei D
通讯作者:
Lei D