Dual crystallization modes of sputter-deposited amorphous SiGe films
Dual crystallization modes of sputter-deposited amorphous SiGe films
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溅射沉积非晶 SiGe 薄膜的双晶化模式
DOI：
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
H. Yasuda
中科院分区：
文献类型：
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作者：
M. Okugawa;R. Nakamura;H. Numakura;M. Ishimaru;H. Yasuda
用原位透射电子显微镜研究了室温电子辐照和热退火诱导非晶硅（a-Si）和SiGe合金（a-SiGe）外延薄膜的晶化行为。在室温下的电子辐照，非常快速的结晶，所谓的爆炸结晶，发生在一个较高的电子通量，但不是在一个较低的电子通量。在原位热退火时，富Ge a-SixGe 100 −x中的x在低温下优先且部分地发生爆炸结晶 50.这些结果表明，增加硅含量的a-SiGe防止发生爆炸结晶。我们以前提出，爆炸结晶可以发生在原始的a-Ge薄膜通过界面的液体状，高密度的非晶态生长前沿。在这种高密度的非晶状态的不稳定性的增加所造成的Si在a-SiGe中的增加显然引起的抑制爆炸结晶。
The crystallization behavior of sputter-deposited films of amorphous Si (a-Si) and SiGe alloys (a-SiGe) induced by electron irradiation at room temperature and by thermal annealing was investigated by in situ transmission electron microscopy. On electron irradiation at room temperature, extremely rapid crystallization, so-called explosive crystallization, occurred at a higher electron flux but not at a lower electron flux. On in situ thermal annealing, explosive crystallization occurred preferentially and partially at low temperatures in Ge-rich a-SixGe100−x for x 50. These results indicate that the increase of Si content in a-SiGe prevents the occurrence of explosive crystallization. We previously proposed that explosive crystallization can occur in pristine a-Ge films via the interface of a liquid-like, high-density amorphous state at the growth front. An increase in the instability of this high-density amorphous state caused by the increase of Si in a-SiGe apparently gives rise to the suppression of explosive crystallization.
影响因子：
3.7
作者：
Barkalov, O. I.;Tissen, V. G.;Nefedova, M. V.
通讯作者：
Nefedova, M. V.