Variation of Growth Rate in InN Molecular-Beam-Epitaxy Growth Using Multiple Radio-Frequency Plasma Cells
Variation of Growth Rate in InN Molecular-Beam-Epitaxy Growth Using Multiple Radio-Frequency Plasma Cells
复制标题
使用多个射频浆细胞进行 InN 分子束外延生长的生长速率变化
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
Kosuke Funaki
中科院分区：
文献类型：
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作者：
Yuichi Sato;Kosuke Funaki
在分子束外延装置中，利用多个射频氮等离子体池同时工作，在(0001)蓝宝石衬底上生长了氮化铟(InN)薄膜。比较了生长温度、铟努森池温度和生长过程中运行的氮等离子体池个数对生长速率的影响。生长速度很容易与浆细胞的数量成比例地增加，而不会对InN薄膜的性能造成很大的影响。
Indium nitride (InN) thin films were grown on (0001) sapphire substrates in a molecular beam epitaxy apparatus with simultaneous operation of multiple radio-frequency nitrogen plasma cells. Growth rates of the obtained InN thin films were compared in terms of the growth temperature, indium Knudsen-cell temperature, and number of nitrogen plasma cells operated during the growth. Growth rate easily increased proportionately with the number of plasma cells without large deteriorations in the properties of the InN thin films.
影响因子：
3.2
作者：
M. Himmerlich;Andreas Knübel;R. Aidam;L. Kirste;A. Eisenhardt;S. Krischok;J. Pezoldt;P. Schley;E. Sakalauskas;R. Goldhahn;R. Félix;J. Mánuel;F. M. Morales;D. Carvalho;T. Ben;R. García;G. Koblmüller
通讯作者：
M. Himmerlich;Andreas Knübel;R. Aidam;L. Kirste;A. Eisenhardt;S. Krischok;J. Pezoldt;P. Schley;E. Sakalauskas;R. Goldhahn;R. Félix;J. Mánuel;F. M. Morales;D. Carvalho;T. Ben;R. García;G. Koblmüller