Energy Level Engineering in Organic Thin Films by Tailored Halogenation
Energy Level Engineering in Organic Thin Films by Tailored Halogenation
复制标题
通过定制卤化进行有机薄膜能级工程
DOI:
10.1002/adfm.202002987
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发表时间:
2020
影响因子:
19
通讯作者:
K. Leo
中科院分区:
文献类型:
--
作者:
K. Ortstein;S. Hutsch;A. Hinderhofer;J. Vahland;M. Schwarze;S. Schellhammer;M. Hodas;T. Geiger;H. Kleemann;F. Schreiber;H. Bettinger;F. Ortmann;K. Leo
In modern electronics, it is essential to adapt band structures by adjusting energy levels and band gaps. At first sight, this “band structure engineering” seems impossible in organic semiconductors, which usually exhibit localized electronic states instead of Bloch bands. However, the strong Coulomb interaction in organic semiconductors allows for a continuous shift of the ionization energy (IE) over a wide range by mixing molecules with halogenated derivatives that exhibit different quadrupole moments. Here, this effect of energy level engineering on blends of pentacene and two fluorinated derivatives, in which the position but not the number of fluorine atoms differ, is studied. Structural investigations confirm that pentacene forms intermixed phases in blends with the fluorinated species. The investigation of electronic properties and simulations reveals a much larger shift of the ionization energy (1.5 eV) than in previous studies, allowing to test this model in a range not investigated so far, and emphasizing the role of the position of the halogen atoms. The tuning effect is preserved in electronic devices such as field‐effect transistors and significantly influences device characteristics.
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影响因子:
15
作者:
V. Belova;P. Beyer;Eduard Meister;Theresa Linderl;M. Halbich;M. Gerhard;S. Schmidt;T. Zechel;Tino Meisel;A. Generalov;A. S. Anselmo;R. Scholz;O. Konovalov;A. Gerlach;M. Koch;A. Hinderhofer;A. Opitz;W. Brütting;F. Schreiber
通讯作者:
V. Belova;P. Beyer;Eduard Meister;Theresa Linderl;M. Halbich;M. Gerhard;S. Schmidt;T. Zechel;Tino Meisel;A. Generalov;A. S. Anselmo;R. Scholz;O. Konovalov;A. Gerlach;M. Koch;A. Hinderhofer;A. Opitz;W. Brütting;F. Schreiber
影响因子:
8.6
作者:
J. Perdew;K. Burke;M. Ernzerhof
通讯作者:
J. Perdew;K. Burke;M. Ernzerhof
DOI:
--
发表时间:
2019
期刊:
影响因子:
--
作者:
中村賀美;竹内孝江
通讯作者:
竹内孝江
影响因子:
3.9
作者:
I. Salzmann;S. Duhm;G. Heimel;J. Rabe;N. Koch;M. Oehzelt;Y. Sakamoto;Toshiyasu Suzuki
通讯作者:
Toshiyasu Suzuki
影响因子:
3
作者:
CLARK, T;CHANDRASEKHAR, J;SCHLEYER, PV
通讯作者:
SCHLEYER, PV