Energy Level Engineering in Organic Thin Films by Tailored Halogenation

Energy Level Engineering in Organic Thin Films by Tailored Halogenation
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通过定制卤化进行有机薄膜能级工程

DOI:
10.1002/adfm.202002987
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发表时间:
2020
影响因子:
19
通讯作者:
K. Leo
K. Leo
中科院分区:
材料科学1区
文献类型:
--
作者:
K. Ortstein;S. Hutsch;A. Hinderhofer;J. Vahland;M. Schwarze;S. Schellhammer;M. Hodas;T. Geiger;H. Kleemann;F. Schreiber;H. Bettinger;F. Ortmann;K. Leo

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在现代电子学中,通过调整能级和带隙来调整能带结构是必不可少的。乍一看,这种“能带结构工程”在有机半导体中似乎是不可能的,有机半导体通常表现出局域电子态而不是布洛赫带。然而,有机半导体中的强库仑相互作用允许通过将分子与表现出不同四极矩的卤代衍生物混合来在宽范围内连续移动电离能(IE)。在这里,并五苯和两个氟化衍生物,其中的位置,但不是氟原子的数量不同的共混物的能级工程的这种效果进行了研究。结构研究证实,并五苯与氟化物质的共混物形成混合相。电子性质和模拟的调查揭示了一个更大的移动的电离能(1.5 eV)比以前的研究,允许测试这个模型在一个范围内没有调查到目前为止,并强调卤素原子的位置的作用。调谐效应保留在电子器件中,如场效应晶体管,并显着影响器件特性。
In modern electronics, it is essential to adapt band structures by adjusting energy levels and band gaps. At first sight, this “band structure engineering” seems impossible in organic semiconductors, which usually exhibit localized electronic states instead of Bloch bands. However, the strong Coulomb interaction in organic semiconductors allows for a continuous shift of the ionization energy (IE) over a wide range by mixing molecules with halogenated derivatives that exhibit different quadrupole moments. Here, this effect of energy level engineering on blends of pentacene and two fluorinated derivatives, in which the position but not the number of fluorine atoms differ, is studied. Structural investigations confirm that pentacene forms intermixed phases in blends with the fluorinated species. The investigation of electronic properties and simulations reveals a much larger shift of the ionization energy (1.5 eV) than in previous studies, allowing to test this model in a range not investigated so far, and emphasizing the role of the position of the halogen atoms. The tuning effect is preserved in electronic devices such as field‐effect transistors and significantly influences device characteristics.
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DOI: --
发表时间: 2019
期刊:
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