Extraordinary optical transmission in silicon nanoholes.
Extraordinary optical transmission in silicon nanoholes.
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DOI：
10.1038/s41598-021-01068-x
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发表时间：
2021-11-03
影响因子：
4.6
通讯作者：
Swillam M
中科院分区：
文献类型：
--
作者：
Mekawey H;Ismail Y;Swillam M
本文首次研究了具有亚波长孔阵列和高过剩载流子浓度的硅薄膜中的超常光透射现象。典型地，EOT在不透明的穿孔金属膜中进行研究。使用硅将把EOT及其许多应用带到硅光子学领域和中红外范围。由于硅薄膜在中红外波段是半透明的，本文提出了一种推广文献中用于不透明薄膜EOT研究的归一化透射度量的方法。通过掺杂和载流子的产生，将等离子体色散效应引入到所研究的多孔硅薄膜中。仔细考虑了两种情况下光学响应建模的差异。全波模拟和分析表明，增强传输时，使用硅与过剩的载流子，模仿穿孔的金属薄膜中报道的增强。EOT被发现在中红外，而不是可见光范围内，这是在金属膜的情况。在Si中产生过量载流子的情况下，在6.68 µm附近显示出达到157%的中红外EOT峰，而掺磷Si的情况下，在8.6 µm附近显示出152%的透射增强。研究了空穴尺寸和载流子浓度对透射率的影响。研究并验证了Si的情况下的基模截止与EOT峰值波长之间的关系与诸如银的金属的情况下的类似性。研究了多孔硅薄膜的透射灵敏度随孔和周围材料折射率的变化。此外，还研究了器件在传感具有几乎相同折射率但具有不同吸收指纹的孔和周围材料方面的潜力。
In this work, for the first time, a study was conducted of the existence of Extraordinary Optical Transmission (EOT) in Silicon (Si) thin films with subwavelength holes array and high excess carrier concentration. Typically EOT is studied in opaque perforated metal films. Using Si would bring EOT and its many applications to the silicon photonics realm and the mid-IR range. Since Si thin film is a semi-transparent film in mid-IR, a generalization was proposed of the normalized transmission metric used in literature for EOT studies in opaque films. The plasma dispersion effect was introduced into the studied perforated Si film through either doping or carriers’ generation. Careful consideration for the differences in optical response modeling in both cases was given. Full-wave simulation and analysis showed an enhanced transmission when using Si with excess carriers, mimicking the enhancement reported in perforated metallic films. EOT was found in the mid-IR instead of the visible range which is the case in metallic films. The case of Si with generated excess carriers showed a mid-IR EOT peak reaching 157% around 6.68 µm, while the phosphorus-doped Si case showed a transmission enhancement of 152% around 8.6 µm. The effect of varying the holes’ dimensions and generated carriers’ concentration on the transmission was studied. The analogy of the relation between the fundamental mode cutoff and the EOT peak wavelength in the case of Si to the case of metal such as silver was studied and verified. The perforated Si thin film transmission sensitivity for a change in the refractive index of the holes and surroundings material was investigated. Also, a study of the device potential in sensing the hole and surroundings materials that have almost the same refractive index yet with different absorption fingerprints was performed as well.
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影响因子：
64.8
作者：
Ebbesen, TW;Lezec, HJ;Wolff, PA
通讯作者：
Wolff, PA
影响因子：
44.1
作者：
Garcia-Vidal, F. J.;Martin-Moreno, L.;Kuipers, L.
通讯作者：
Kuipers, L.
影响因子：
2.4
作者：
Degiron, A;Lezec, HJ;Ebbesen, TW
通讯作者：
Ebbesen, TW
影响因子：
4.1
作者：
BERENGER, JP
通讯作者：
BERENGER, JP
影响因子：
3.2
作者：
Ginn, James C.;Jarecki, Robert L., Jr.;Davids, Paul S.
通讯作者：
Davids, Paul S.