Role of valence changes and nanoscale atomic displacements in BiS(2)-based superconductors.

Role of valence changes and nanoscale atomic displacements in BiS(2)-based superconductors.
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BiS2 基超导体中价态变化和纳米级原子位移的作用

DOI:
10.1038/srep37394
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发表时间:
2016-11-22
期刊:
影响因子:
4.6
通讯作者:
Cao G
Cao G
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Cheng J;Zhai H;Wang Y;Xu W;Liu S;Cao G

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层状晶体结构中的超导性吸引了凝聚态社区的持续兴趣,主要是由于其奇异的超导特性。EuBiS_2F是BiS_2基超导家族中的一个新成员,在0.3K温度下不掺杂就具有超导电性。50at.% Ce替代Eu后,超导性随Tc的增加而增强,最高可达2.2K。然而,Tcencement的机制尚未阐明。本文采用X射线吸收谱(XAS)研究了Ce掺杂对自掺杂EuBiS2F超导体的影响。我们已经建立了Ce掺杂和Tcencement之间的关系,Eu的价态变化和纳米原子位移。这一新发现揭示了BiS2基超导体中超导性、电荷和局部结构之间的相互作用。
Superconductivity within layered crystal structures has attracted sustained interest among condensed matter community, primarily due to their exotic superconducting properties. EuBiS2F is a newly discovered member in the BiS2-based superconducting family, which shows superconductivity at 0.3 K without extrinsic doping. With 50 at.% Ce substitution for Eu, superconductivity is enhanced with Tc increased up to 2.2 K. However, the mechanisms for theTcenhancement have not yet been elucidated. In this study, the Ce-doping effect on the self-electron-doped superconductor EuBiS2F was investigated by X-ray absorption spectroscopy (XAS). We have established a relationship between Ce-doping and theTcenhancement in terms of Eu valence changes and nanoscale atomic displacements. The new finding sheds light on the interplay among superconductivity, charge and local structure in BiS2-based superconductors.
Sr1-xLaxFBiS2 中 La 掺杂诱导的超导
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