Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems
Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems
复制标题
利用工艺变化提高 NAND 闪存存储系统的写入性能
DOI：
10.1109/tvlsi.2015.2393299
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发表时间：
2016
影响因子：
2.8
通讯作者：
Edwin Hsing-Mean Sha
中科院分区：
文献类型：
--
作者：
Liang Shi;Yejia Di;Mengying Zhao;Chun Jason Xue;Kaijie Wu;Edwin Hsing-Mean Sha
由于最近面向密度的闪存技术的进步，闪存的写入性能已经显著降低。已经提出了通过利用闪存块在其不同磨损阶段中的不同强度来提高写入性能的技术。块在新的和强大的时候以较快的速度写入，随着它的老化和变弱，逐渐以较慢的速度写入。在这些工作的启发下，本简介提出了一种新技术，利用先进技术扩展带来的闪存块之间的显著工艺差异。首先，提出了一种写速度检测方法来识别每个块的强度。然后，提出了一种启发式方法来利用块之间的速度差异来提高写性能。一系列跟踪驱动的模拟表明，所提出的方法与现有方法相比，写性能平均提高了30%。
The write performance of flash memory has been degraded significantly due to the recent density-oriented advancements of flash technology. Techniques have been proposed to improve the write performance by exploiting the varying strength of a flash block in its different worn-out stages. A block is written with a faster speed when it is new and strong, and gradually will be written with slower speeds as it is aging and becomes weak. Motivated by these works, this brief proposes a new technique by exploiting the significant process variation among flash blocks introduced by the advanced technology scaling. First, a write speed detection approach is proposed to identify the strength of each block. Then, a heuristic approach is proposed to exploit the speed variation among blocks for write performance improvement. A series of trace-driven simulations shows that the proposed approach generates substantial write performance improvement over state-of-the-art approaches by 30% on average.
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DOI：
10.1109/codes-isss.2013.6658994
发表时间：
2013-09
期刊：
2013 International Conference on Hardware/Software Codesign and System Synthesis (CODES+ISSS)
影响因子：
--
作者：
Renhai Chen;Yi Wang;Z. Shao
通讯作者：
Renhai Chen;Yi Wang;Z. Shao
DOI：
--
发表时间：
2014-02
期刊：
--
影响因子：
--
作者：
Jaeyong Jeong;Sangwook Shane Hahn;Sungjin Lee-;Jihong Kim
通讯作者：
Jaeyong Jeong;Sangwook Shane Hahn;Sungjin Lee-;Jihong Kim
DOI：
10.1109/rttas.2002.1137393
发表时间：
2002-09
期刊：
Proceedings. Eighth IEEE Real-Time and Embedded Technology and Applications Symposium
影响因子：
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作者：
Li-Pin Chang;Tei-Wei Kuo
通讯作者：
Li-Pin Chang;Tei-Wei Kuo
DOI：
10.1109/tvlsi.2011.2142015
发表时间：
2012-06-01
影响因子：
2.8
作者：
Liu, Duo;Wang, Yi;Guan, Yong
通讯作者：
Guan, Yong
DOI：
10.1145/1138041.1138043
发表时间：
2006-02
期刊：
ACM Trans. Storage
影响因子：
--
作者：
Jen-Wei Hsieh;Tei-Wei Kuo;Li-Pin Chang
通讯作者：
Jen-Wei Hsieh;Tei-Wei Kuo;Li-Pin Chang