Domain wall gate for magnetic logic and memory applications with perpendicular anisotropy
Domain wall gate for magnetic logic and memory applications with perpendicular anisotropy
复制标题
用于具有垂直各向异性的磁逻辑和存储器应用的畴壁门
DOI：
10.1109/iedm.2013.6724684
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Becherer
中科院分区：
文献类型：
--
作者：
S. Breitkreutz;G. Ziemys;I. Eichwald;J. Kiermaier;G. Csaba;W. Porod;D. Schmitt;M. Becherer
磁性纳米线中的畴壁运动和钉扎在下一代磁存储器和逻辑器件中起着至关重要的作用。在本文中，我们实验证明了一种新的设备，DW传播在纳米线是局部控制周围的栅极磁铁。DW钉扎的实验证明，并进一步支持微磁学模拟。详细阐述了3D集成的前景，指出了缩小到0.01μm2以下的足迹，同时提高了速度和可靠性裕度。所展示的畴壁门能够实现逻辑操作，可以作为磁互连中的开关，并且在磁逻辑和存储器件中具有深远的应用。
Domain wall (DW) motion and pinning in magnetic nanowires play an essential role in next generation magnetic memory and logic devices. In this paper, we experimentally demonstrate a novel device, where the DW propagation in a nanowire is locally controlled by surrounding gate magnets. DW pinning is proven by experiment and further supported by micromagnetic simulations. Prospects for 3D integration are elaborated, which indicate a scaling path to below 0.01μm2 footprint while having increased speed and reliability margins. The demonstrated domain wall gate enables logic operation, can act as an on-off switch in magnetic interconnects and has far reaching applications in magnetic logic and memory devices.
具有垂直磁各向异性的纳米线中畴壁的受控钉扎和脱钉
DOI：
10.1088/0953-8984/24/2/024208
发表时间：
2012
期刊：
Journal of Physics: Condensed Matter
影响因子：
--
作者：
T. Gerhardt;A. Drews;G. Meier
通讯作者：
G. Meier