Efficient performance enhancement of GaN-based vertical light-emitting diodes coated with N-doped graphene quantum dots
Efficient performance enhancement of GaN-based vertical light-emitting diodes coated with N-doped graphene quantum dots
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N掺杂石墨烯量子点涂层GaN基垂直发光二极管的高效性能增强
DOI：
10.1016/j.optmat.2019.01.026
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发表时间：
2019-03
影响因子：
3.9
通讯作者：
Yang Junhe
中科院分区：
文献类型：
--
作者：
Liu Deshuai;Li Hui-Jun;Lyu Bowen;Cheng Shiduo;Zhu Yuankun;Wang Ping;Wang Ding;Wang Xianying;Yang Junhe
基于金属有机化学气相沉积（MOCVD）技术、晶圆键合技术、激光提升（LLO）技术、电感耦合等离子体（ICP）蚀刻和浸渍工艺，制备了n掺杂石墨烯量子点（N-GQDs）装饰的新型垂直发光二极管（vled）。涂覆N-GQDs后，vled的发光性能明显增强，电阻明显降低。结果表明，光输出功率（LOP）的提高取决于光提取效率和电流扩展的提高。外量子效率（EQE）的提高主要是由于表面的粗糙化。同时，在0.9 mg/mL N-GQDs溶液中，vled的电致发光（EL）和光致发光（PL）强度均有增强，是裸vled的4倍。涂层N-GQDs后，vled的性能得到了很大的提高，这可能是由于从波导模式中提取光而恢复的光子。
Novel vertical light-emitting diodes (VLEDs) decorated with N-doped graphene quantum dots (N-GQDs) have been fabricated, based on the metal organic chemical vapor deposition method (MOCVD), wafer bonding technique, laser lift-off (LLO) technique, inductively coupled plasma (ICP) etching and impregnation processing. There is an obvious luminescence enhancement and resistance reduction for VLEDs after coating N-GQDs. The results show an improvement of light output power (LOP), dependent on the improvement of optical extraction efficiency and current spreading. The improvement of external quantum efficiency (EQE) is mainly owing to the roughened surfaces. Meanwhile, an enhancement of electroluminescence (EL) intensity and photoluminescence (PL) intensity has been achieved when the VLEDs were immersed in 0.9 mg/mL of N-GQDs solution, 4 times that of bare VLEDs. After coating N-GQDs, the performance of VLEDs is greatly improved, which could be attributed to the photons recovered by extracting light from waveguide modes.
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影响因子：
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作者：
Wang H;Sun P;Cong S;Wu J;Gao L;Wang Y;Dai X;Yi Q;Zou G
通讯作者：
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影响因子：
6.4
作者：
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影响因子：
4.6
作者：
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通讯作者：
Sun Z
影响因子：
6.7
作者：
Young-Chul Leem;O. Seo;Yong-Ryun Jo;Joon-Heon Kim;Jaeyi Chun;Bong-Joong Kim;D. Noh;W. Lim;Yong-Il Kim;Seong-Ju Park
通讯作者：
Young-Chul Leem;O. Seo;Yong-Ryun Jo;Joon-Heon Kim;Jaeyi Chun;Bong-Joong Kim;D. Noh;W. Lim;Yong-Il Kim;Seong-Ju Park
影响因子：
3.2
作者：
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通讯作者：
Tsung-Jui Yang;R. Shivaraman;J. Speck;Yuh‐Renn Wu