Unusual stoichiometry, band structure and band filling in conducting enantiopure radical cation salts of TM-BEDT-TTF showing helical packing of the donors

Unusual stoichiometry, band structure and band filling in conducting enantiopure radical cation salts of TM-BEDT-TTF showing helical packing of the donors
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TM-BEDT-TTF 的导电对映纯自由基阳离子盐中异常的化学计量、能带结构和能带填充显示供体的螺旋堆积

DOI:
10.1039/d1tc01112j
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发表时间:
2021
影响因子:
6.4
通讯作者:
Avarvari Narcis
Avarvari Narcis
中科院分区:
材料科学2区
文献类型:
--
作者:
Pop Flavia;Meziere Cecile;Allain Magali;Auban-Senzier Pascale;Tajima Naoya;Hirobe Daichi;Yamamoto Hiroshi M.;Canadell Enric;Avarvari Narcis

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在 (n-Bu4N)2(Mo6O19) 和氯仿或溴仿存在下,以纯 (S,S,S,S) 和 (R,R,R,R) 对映体形式的四甲基-双(乙撑二硫)-四硫富瓦烯 (TM-BEDT-TTF) (1) 电结晶,得到一系列四种同构对映体纯自由基阳离子 盐[(S/R)-1]9(Mo6O19)5·(CHX3)2 (X = Cl, Br),在三角非中心对称空间群R32中结晶。在式单元中,有六个A型供体和三个B型供体,分别显示甲基取代基的(ax、ax、eq、eq)和全ax构象(ax =轴向,eq =赤道)。供体在 ab 平面上形成六边形网络,它们之间的螺旋扭曲导致横向轨道重叠相互作用。外消旋供体的电结晶提供了化合物[(rac)-1]2(Mo6O19),其在单斜晶系P21/n中结晶。单晶电阻率测量显示对映体纯材料的半导体行为,其室温电导率相对较高,为 0.8–1.2 S cm−1,但对高达 2.3 GPa 的施加压力不敏感。通过扩展休克尔紧束缚能带结构计算对导电固体的电子结构进行分析,表明莫特绝缘体行为解释了半导体特性,并表明这些化合物是狄拉克锥材料的有价值的候选者。通过初步的场效应晶体管测量可以进一步了解导电特性。
Electrocrystallization of tetramethyl-bis(ethylenedithio)-tetrathiafulvalene (TM-BEDT-TTF) (1) as pure (S,S,S,S) and (R,R,R,R) enantiomers in the presence of (n-Bu4N)2(Mo6O19) and chloroform or bromoform afforded a series of four isostructural enantiopure radical cation salts [(S/R)-1]9(Mo6O19)5·(CHX3)2 (X = Cl, Br) crystallizing in the trigonal non-centrosymmetric space group R32. In the formula unit there are six donors of type A and three donors of type B showing, respectively, (ax, ax, eq, eq) and all-ax conformations (ax = axial, eq = equatorial) of the methyl substituents. The donors form a hexagonal network in the ab plane with a helical twist between them leading to lateral orbital overlap interactions. Electrocrystallization of the racemic donor provided the compound [(rac)-1]2(Mo6O19) which crystallized in the monoclinic system P21/n. Single crystal resistivity measurements show semiconducting behaviour of the enantiopure materials with a relatively high room temperature conductivity of 0.8–1.2 S cm−1, but rather insensitive to applied pressures of up to 2.3 GPa. Analysis of the electronic structure of the conducting solids through extended Hückel tight-binding band structure calculations indicates a Mott insulator behaviour explaining the semiconducting character and suggests that these compounds are valuable candidates for Dirac cone materials. Further insight into the conducting properties is provided by preliminary field effect transistor measurements.
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发表时间: 2020
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发表时间: 1992
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影响因子: 29.4
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