Unusual stoichiometry, band structure and band filling in conducting enantiopure radical cation salts of TM-BEDT-TTF showing helical packing of the donors
Unusual stoichiometry, band structure and band filling in conducting enantiopure radical cation salts of TM-BEDT-TTF showing helical packing of the donors
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TM-BEDT-TTF 的导电对映纯自由基阳离子盐中异常的化学计量、能带结构和能带填充显示供体的螺旋堆积
DOI:
10.1039/d1tc01112j
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发表时间:
2021
影响因子:
6.4
通讯作者:
Avarvari Narcis
中科院分区:
文献类型:
--
作者:
Pop Flavia;Meziere Cecile;Allain Magali;Auban-Senzier Pascale;Tajima Naoya;Hirobe Daichi;Yamamoto Hiroshi M.;Canadell Enric;Avarvari Narcis
Electrocrystallization of tetramethyl-bis(ethylenedithio)-tetrathiafulvalene (TM-BEDT-TTF) (1) as pure (S,S,S,S) and (R,R,R,R) enantiomers in the presence of (n-Bu4N)2(Mo6O19) and chloroform or bromoform afforded a series of four isostructural enantiopure radical cation salts [(S/R)-1]9(Mo6O19)5·(CHX3)2 (X = Cl, Br) crystallizing in the trigonal non-centrosymmetric space group R32. In the formula unit there are six donors of type A and three donors of type B showing, respectively, (ax, ax, eq, eq) and all-ax conformations (ax = axial, eq = equatorial) of the methyl substituents. The donors form a hexagonal network in the ab plane with a helical twist between them leading to lateral orbital overlap interactions. Electrocrystallization of the racemic donor provided the compound [(rac)-1]2(Mo6O19) which crystallized in the monoclinic system P21/n. Single crystal resistivity measurements show semiconducting behaviour of the enantiopure materials with a relatively high room temperature conductivity of 0.8–1.2 S cm−1, but rather insensitive to applied pressures of up to 2.3 GPa. Analysis of the electronic structure of the conducting solids through extended Hückel tight-binding band structure calculations indicates a Mott insulator behaviour explaining the semiconducting character and suggests that these compounds are valuable candidates for Dirac cone materials. Further insight into the conducting properties is provided by preliminary field effect transistor measurements.
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影响因子:
2.7
作者:
Nabil Mroweh;P. Auban;N. Vanthuyne;E. Lopes;M. Almeida;E. Canadell;N. Avarvari
通讯作者:
N. Avarvari
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
Flavia Pop;M. Allain;P. Auban;J. Martínez;F. Lloret;M. Julve;E. Canadell;N. Avarvari
通讯作者:
N. Avarvari
影响因子:
29.4
作者:
J. Zambounis;Carl W. Mayer;Kurt Hauenstein;B. Hilti;W. Hofherr;Jurgen Pfeiffer;M. Bürkle;G. Rihs
通讯作者:
G. Rihs
影响因子:
3.8
作者:
Mroweh, Nabil;Pop, Flavia;Avarvari, Narcis
通讯作者:
Avarvari, Narcis
DOI:
10.3390/cryst6010008
发表时间:
2016
期刊:
--
影响因子:
--
作者:
Flavia Pop;P. Batail;N. Avarvari
通讯作者:
N. Avarvari