Silicon-based electroluminescent polycrystalline Er-doped Yb3Al5O12 nanofilms fabricated by atomic layer deposition
Silicon-based electroluminescent polycrystalline Er-doped Yb3Al5O12 nanofilms fabricated by atomic layer deposition
复制标题
原子层沉积硅基电致发光多晶掺铒Yb3Al5O12纳米薄膜
DOI：
10.1016/j.jallcom.2020.154964
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发表时间：
2020-08
影响因子：
6.2
通讯作者：
Jiaming Sun
中科院分区：
文献类型：
--
作者：
Jianzhao Liu;Zhongtao Ouyang;Yang Yang;Jiaming Sun
利用原子层沉积实现的亚纳米组分调控，在硅衬底上制备了多晶掺铒钇铝石榴石（YbAG：Er）纳米薄膜，退火温度高于1100 °C。结晶特征对化学计量比的轻微偏差不敏感（对于Yb 3Al 5 O 12，Yb：Al = 3：5）。基于YbAG：Er薄膜的纳米叠层器件呈现出Er相关的1531 nm电致发光，表现出2.7-5.2%的外量子效率和2.4-4.8 × 10 - 4的功率效率，其荧光寿命估计为1-1.2 ms。掺Er ~（3+）离子在Yb_3Al_5O_（12）基体中被Fowler-Nordheim隧穿机制产生的超热电子碰撞激发。这项工作被认为是奠定了基础，操纵多氧化物纳米薄膜与设计的组成和结晶度，并开发光电器件从硅基晶体石榴石薄膜。
By virtue of the sub-nanometer compositional regulation realized via atomic layer deposition, polycrystalline Er-doped Yb3Al5O12(YbAG:Er) garnet nanofilms are fabricated on silicon after annealing above 1100 °C. The crystalline feature is insensitive to slight deviation from the stoichiometric ratio (Yb:Al = 3:5 for Yb3Al5O12). The nanolaminate devices based on YbAG:Er films present Er-related 1531 nm electroluminescence exhibiting the external quantum efficiency of 2.7–5.2% and the power efficiency of 2.4–4.8 × 10−4, whose fluorescence lifetime is estimated as 1–1.2 ms. The doped Er3+ions are impact-excited by hot electrons stemming from Fowler-Nordheim tunneling mechanism within the Yb3Al5O12matrix. This work is believed to lay the basis for manipulating multi-oxide nanofilms with designed composition and crystallinity, and developing optoelectronic devices from Si-based crystalline garnet films.
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