Low-temperature sintering of Al2O3 ceramics doped with 4CuO-TiO2-2Nb2O5 composite oxide sintering aid

Low-temperature sintering of Al2O3 ceramics doped with 4CuO-TiO2-2Nb2O5 composite oxide sintering aid
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4CuO-TiO2-2Nb2O5复合氧化物烧结助剂掺杂Al2O3陶瓷的低温烧结

DOI:
10.1016/j.jeurceramsoc.2020.06.068
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发表时间:
2020-06
影响因子:
5.7
通讯作者:
Yongxiang Li
Yongxiang Li
中科院分区:
材料科学1区
文献类型:
--
作者:
Yan Yang;Mingsheng Ma;Faqiang Zhang;Feng Liu;Guanyu Chen;Zhifu Liu;Yongxiang Li

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在950 ~ 975 °C的低温烧结条件下,添加5wt%的4CuO-TiO 2 - 2Nb 2 O 5复合烧结助剂,制备了致密的氧化铝陶瓷。在最佳工艺条件下烧结的陶瓷具有良好的微波介电性能(εr= 12.7,Q × f = 7400 GHz)、高热导率(18.4 W/m K)和高抗弯强度(320 MPa)。TEM和EDS分析表明,在晶界处形成了厚度为纳米级的非晶态Cu-Ti-Nb-O界面膜,为致密化提供了物质输运通道。Al ~(3+)离子可能在烧结过程中通过在晶界附近被Ti ~(3+)和Ti ~(4+)离子取代而参与质量传递。观察到铜离子在三叉晶界的积累。铜离子在晶界的迁移和反应也可能在促进氧化铝陶瓷的质量传输和低温致密化中起重要作用。
Dense alumina ceramics doped with 5 wt% 4CuO-TiO2-2Nb2O5composite sintering aids were obtained at low sintering temperatures of 950∼975 °C. The ceramic sintered at optimal condition shows good microwave dielectric properties (εr= 12.7, Q × f = 7400 GHz), high thermal conductivity (18.4 W/m K) and high bending strength (320 MPa). TEM and EDS analysis revealed that amorphous Cu-Ti-Nb-O interfacial films with nanometer thickness formed at the grain boundaries, which could provide paths of mass transportation for densification. Al3+ions may be involved in mass transportation through substitution by Ti3+and Ti4+ions near the grain boundary during the sintering process. The accumulation of copper ions at the trigeminal grain boundary was observed. The migration and reaction of copper ions in grain boundaries may also play an important role in promoting mass transportation and low-temperature densification of alumina ceramics.
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