Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
复制标题
高温高功率GaN器件的组装和封装技术
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
J. Wilde
中科院分区：
文献类型：
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作者：
A. Bajwa;Yangyang Qin;R. Reiner;R. Quay;J. Wilde
本文详细分析了适用于高温大功率应用的GaN基高电子迁移率晶体管的组装和封装技术。银烧结和瞬时液相键合被选为芯片连接技术，和金和钯的电互连材料进行了研究。这两种模具附件的特征在于其高达450 °C的高温稳定性。从晶圆上测量到最终组装，进行了系统的电气表征。的热和热机械影响的组件进行了评估。对于芯片连接和互连，进行被动温度冲击循环和主动功率循环，作为表征组装可靠性的初步尝试。最后，提出了一个完整的封装沿着基板，它可以承受高达480 °C的高温。
This paper gives a detailed analysis on the assembly and packaging technologies for the state-of-the-art GaN-based high-electron-mobility transistors, which are suitable for high-temperature and high-power applications. Silver sintering and transient liquid phase bonding were selected as die-attachment techniques, and gold and palladium were investigated for electrical interconnection materials. Both the die-attachments were characterized for their high-temperature stability up to 450 °C. Systematic electrical characterizations were performed from on-wafer measurements to the final assembly. The thermal and thermomechanical influences of the assembly were assessed. For die-attachments and interconnections, passive temperature shock cycling and active power cycling were performed as an initial attempt to characterize the assembly reliability. Finally, a complete package along with the base plate was proposed, which can survive high temperatures up to 480 °C.
影响因子：
9.4
作者：
Li, J. F.;Agyakwa, P. A.;Johnson, C. M.
通讯作者：
Johnson, C. M.