The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy
The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy
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正电子湮没光谱研究绝缘体上硅结构中空位型缺陷的演变
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
R. Gwilliam
中科院分区：
文献类型：
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作者：
P. Coleman;D. Nash;C. Edwardson;A. Knights;R. Gwilliam
变能正电子湮没光谱 (VEPAS) 已应用于研究硅 (Si) 和绝缘体上硅 (SOI) 样品的 1.5 μm 厚 Si 顶层中空位型缺陷结构的形成和演化。样品在注量为 1013 至 1015 cm−2 之间注入 2 MeV Si 离子，并在注入状态下以及在 350 至 800 °C 温度下退火 30 分钟后进行探测。在SOI的情况下，离子被注入，使得它们的分布主要在绝缘埋层氧化物层中，因此它们与顶部Si层中的空位以及埋层氧化物之外的其他填隙结合的能力被有效地抵消。退火至 500 °C 后，在 Si 和 SOI 样品的顶部 Si 层中，未观察到正电子对 n 空位小簇（Vn，n ∼ 3）演变的可测量差异；然而，在较高温度下，这种响应在 SOI 样品中持续存在，因为 Si 中的响应逐渐降低……
Variable-energy positron annihilation spectroscopy (VEPAS) has been applied to the study of the formation and evolution of vacancy-type defect structures in silicon (Si) and the 1.5 μm thick Si top layer of silicon-on-insulator (SOI) samples. The samples were implanted with 2 MeV Si ions at fluences between 1013 and 1015 cm−2, and probed in the as-implanted state and after annealing for 30 min at temperatures between 350 and 800 °C. In the case of SOI the ions were implanted such that their profile was predominantly in the insulating buried oxide layer, and thus their ability to combine with vacancies in the top Si layer, and that of other interstitials beyond the buried oxide, was effectively negated. No measurable differences in the positron response to the evolution of small clusters of n vacancies (Vn, n ∼ 3) in the top Si layer of the Si and SOI samples were observed after annealing up to 500 °C; at higher temperatures, however, this response persisted in the SOI samples as that in Si decreased towar...
影响因子：
4
作者：
Abdulmalik, D. A.;Coleman, P. G.;Cristiano, F.
通讯作者：
Cristiano, F.