Q-ary Asymmetric LOCO Codes: Constrained Codes Supporting Flash Evolution
Q-ary Asymmetric LOCO Codes: Constrained Codes Supporting Flash Evolution
复制标题
Q 元非对称 LOCO 代码：支持闪存演进的约束代码
DOI：
10.1109/isit44484.2020.9174176
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Calderbank, Robert
中科院分区：
文献类型：
--
作者：
Hareedy, Ahmed;Dabak, Beyza;Calderbank, Robert
闪存设备正在赢得与磁记录设备的存储密度竞争。这一结果源于物理学的进步，允许每个单元存储超过一位，加上信号处理的进步，减少了物理不稳定性的影响。在存储中使用约束代码以避免有问题的模式。最近，我们介绍了二进制对称字典序约束码（LOCO码）的数据存储和传输。本文介绍了简单的约束代码，支持非二进制物理门的多，三，四，和目前正在开发的五电平单元（M/T/Q/P-LC）闪存。如果有问题的模式随着时间的推移而改变，新的代码可以很容易地修改。这些代码旨在减轻单元间干扰，这是闪存设备中的关键错误来源。新的代码被称为q元非对称LOCO码（QA-LOCO码），其结构包含了以前为单级单元（SLC）闪存器件设计的代码（ALOCO码）。QA-LOCO码适用于每个单元具有任意数量q个电平的闪存器件。当q ≥ 4时，QA-LOCO码的码率可达0.95log2q/码元.容量实现率、经济实惠的编码-解码复杂性和易于重新配置性支持M/T/Q/P-LC闪存器件的不断改进，以及生命周期管理，因为这些器件的特性随时间而变化。
Flash memory devices are winning the competition for storage density against magnetic recording devices. This outcome results from advances in physics that allow storage of more than one bit per cell, coupled with advances in signal processing that reduce the effect of physical instabilities. Constrained codes are used in storage to avoid problematic patterns. Recently, we introduced binary symmetric lexicographically-ordered constrained codes (LOCO codes) for data storage and transmission. This paper introduces simple constrained codes that support non-binary physical gates in multi, triple, quad, and the currently-in-development penta-level cell (M/T/Q/P-LC) Flash memories. The new codes can be easily modified if problematic patterns change with time. These codes are designed to mitigate inter-cell interference, which is a critical source of error in Flash devices. The new codes are called q-ary asymmetric LOCO codes (QA-LOCO codes), and the construction subsumes codes previously designed for single-level cell (SLC) Flash devices (ALOCO codes). QA-LOCO codes work for a Flash device with any number, q, of levels per cell. For q ≥ 4, we show that QA-LOCO codes can achieve rates greater than 0.95log2q information bits per coded symbol. Capacity-achieving rates, affordable encoding-decoding complexity, and ease of reconfigurability support the growing improvement of M/T/Q/P-LC Flash memory devices, as well as lifecycle management as the characteristics of these devices change with time.
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DOI：
10.1016/s0019-9958(70)90369-4
发表时间：
1970-12
期刊：
Inf. Control.
影响因子：
--
作者：
D. Tang;L. Bahl
通讯作者：
D. Tang;L. Bahl
DOI：
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发表时间：
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期刊：
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影响因子：
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作者：
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通讯作者：
Kees A. Schouhamer Immink;P. Siegel;J. Wolf
数字磁存储的记录代码
影响因子：
2.1
作者：
P. Siegel
通讯作者：
P. Siegel
影响因子：
2.5
作者：
ADLER, RL;COPPERSMITH, D;HASSNER, M
通讯作者：
HASSNER, M
管理设备生命周期：M/T/Q/P-LC 闪存的可重新配置约束代码
影响因子：
2.5
作者：
Ahmed Hareedy;Beyza Dabak;Robert Calderbank
通讯作者：
Robert Calderbank