Effect of strain on band alignment of GaAsSb/GaAs quantum wells
Effect of strain on band alignment of GaAsSb/GaAs quantum wells
复制标题
应变对 GaAsSb/GaAs 量子阱能带排列的影响
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
E. Kioupakis
中科院分区：
文献类型：
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作者：
Christina M. Jones;E. Kioupakis
GaAsSb/GaAs量子威尔斯阱在光通信领域有着重要的应用价值，但其能带取向特性还没有得到充分的研究，特别是在1.3 μm波长下，Sb含量为35%时。利用基于8 × 8 k·p理论的器件模拟方法，研究了GaAsSb/GaAs量子阱组分、宽度和应变对能带取向的影响。应变松弛的威尔斯井展示I型对准且假晶威尔斯井展示II型对准，而不管宽于3 nm的威尔斯井的量子井组成或厚度如何。对于部分应变松弛的威尔斯，我们确定的功能的组合物，宽度和应变的相互作用的带对齐。我们的计算结果在各种应变条件下与已发表的实验数据吻合良好。GaAsSb/GaAs量子威尔斯在光通信领域有着重要的应用价值，但其能带取向特性还不完全清楚，特别是当Sb合金浓度为35%时，用于1.3 μm波段的发射。利用基于8 × 8 k·p理论的器件模拟方法，研究了GaAsSb/GaAs量子阱组分、宽度和应变对能带取向的影响。应变松弛的威尔斯井展示I型对准且假晶威尔斯井展示II型对准，而不管宽于3 nm的威尔斯井的量子井组成或厚度如何。对于部分应变松弛的威尔斯，我们确定的功能的组合物，宽度和应变的相互作用的带对齐。我们的计算结果在各种应变条件下与已发表的实验数据吻合良好。这项工作提供了深刻的见解的GaAsSb/GaAs量子威尔斯，以及嵌入的量子点与强限制沿着面外方向的能带对准。
GaAsSb/GaAs quantum wells are of great interest for optical communications; however, their band alignment properties are not fully understood, particularly at 35% Sb alloy concentration used for emission at 1.3 μm. We use device simulation methods based on the 8 × 8 k·p theory to explore the effects of GaAsSb/GaAs quantum well composition, width, and strain on the band alignment. Strain-relaxed wells demonstrate type-I alignment and pseudomorphic wells demonstrate type-II alignment, regardless of quantum-well composition or thickness for wells wider than 3 nm. For partially strain-relaxed wells, we determine the band alignment as a function of the interplay of composition, width, and strain. Our calculated results at various strain conditions agree well with published experimental data. This work provides insight on band alignment of GaAsSb/GaAs quantum wells, as well as of embedded quantum dots with strong confinement along the out-of-plane direction.GaAsSb/GaAs quantum wells are of great interest for optical communications; however, their band alignment properties are not fully understood, particularly at 35% Sb alloy concentration used for emission at 1.3 μm. We use device simulation methods based on the 8 × 8 k·p theory to explore the effects of GaAsSb/GaAs quantum well composition, width, and strain on the band alignment. Strain-relaxed wells demonstrate type-I alignment and pseudomorphic wells demonstrate type-II alignment, regardless of quantum-well composition or thickness for wells wider than 3 nm. For partially strain-relaxed wells, we determine the band alignment as a function of the interplay of composition, width, and strain. Our calculated results at various strain conditions agree well with published experimental data. This work provides insight on band alignment of GaAsSb/GaAs quantum wells, as well as of embedded quantum dots with strong confinement along the out-of-plane direction.
影响因子：
3.4
作者：
Hayne, M.;Young, R. J.;Bimberg, D.
通讯作者：
Bimberg, D.