Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities
Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities
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将位点控制的 InGaAs 量子点集成到高质量微腔中进行腔量子电动力学研究
DOI：
10.1117/12.876794
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
A. Forchel
中科院分区：
文献类型：
--
作者：
S. Reitzenstein;Schneider;F. Albert;A. Huggenberger;T. Heindel;M. Lermer;S. Stobbe;P. Weinmann;P. Lodahl;S. Höfling;M. Kamp;L. Worschech;A. Forchel
半导体量子点（QD）是光子学和未来量子信息技术领域令人着迷的纳米结构。然而，自组织量子点的随机位置抑制了依赖于腔量子电动力学（cQED）效应的设备中的确定性耦合，这使得量子光源的大规模制造变得复杂。因此，大量的努力集中在位点控制量子点的生长和器件集成上。我们展示了位点控制的 In(Ga)As 量子点低密度阵列的生长，其中浅蚀刻纳米孔充当成核位点。纳米孔相对于交叉标记进行定位，从而允许位点控制 QD (SCQD) 和高质量微腔的光子模式进行精确的空间对准，精度优于 50 nm。我们还从单 SCQD 发射模式线宽、振荡器强度和量子效率方面解决了 SCQD 的光学质量。在湿法化学蚀刻纳米孔上形成的应变耦合 SCQD 的堆叠生长提供了平均值为 210 μeV 的最小线宽。通过对不同覆盖层厚度的样品进行时间分辨光致发光研究，我们确定 SCQD 的量子效率接近 50%，振荡器强度约为 10。最后，将介绍与弱耦合 SCQD - 微柱系统的 g(2)(0) = 0.12 相关的单光子发射。
Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites. The nanoholes are located relative to cross markers which allows for a precise spatial alignment of the site-controlled QDs (SCQDs) and the photonic modes of high quality microcavites with an accuracy better than 50 nm. We also address the optical quality of the SCQDs in terms of the single SCQD emission mode linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping layer we determine a quantum efficiency of the SCQD close to 50 % and an oscillator strength of about 10. Finally, single photon emission with associated with g(2)(0) = 0.12 of a weakly coupled SCQD - micropillar system will be presented.
影响因子：
64.8
作者：
Yoshie, T;Scherer, A;Deppe, DG
通讯作者：
Deppe, DG