Lets move polymorphism downwards: On the multifunctional logic based on ambipolar behaviour of semiconductor devices
Lets move polymorphism downwards: On the multifunctional logic based on ambipolar behaviour of semiconductor devices
复制标题
让我们向下移动多态性：基于半导体器件双极行为的多功能逻辑
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
R. Tesar
中科院分区：
文献类型：
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作者：
R. Ruzicka;R. Tesar
多态（多功能）电子学的主要优点之一是在尺寸方面的效率。为了满足电路的尺寸限制，它具有相同（不变）结构的多个功能，电路的组件必须是多功能的，并且这些组件必须在尽可能低的级别上定义。更低的级别意味着更有效的解决方案。本文展示了多态电路的组件应该如何更有效地实现，如果在晶体管级别（基于双极性，通常在所谓的后硅器件中观察到）采用多功能性，而不是在抽象的栅极级别，因为它已经被使用。
One of main advantages of polymorphic (multifunctional) electronics is efficiency in terms of size. To fulfil size-oriented constraints of a circuit, which exhibits more than one function with the same (unchanged) structure, components of the circuit have to be multi-functional and these components must be defined at the lowest possible level. Lower level means more size-efficient solution. This paper shows how components for polymorphic circuits should be implemented more efficiently, if multi-functionality at the transistor level (based on ambipolarity, often observed in so called post-silicon devices) is employed instead of at the gate level of abstraction, as it was used yet.
影响因子：
17.1
作者：
Colli, Alan;Tahraoui, Abbes;Ferrari, Andrea C.
通讯作者：
Ferrari, Andrea C.