Measurements and microscopic model of quantum capacitance in graphene
Measurements and microscopic model of quantum capacitance in graphene
复制标题
石墨烯量子电容的测量和微观模型
DOI：
10.1063/1.3574011
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发表时间：
2011-04
影响因子：
4
通讯作者：
Peng, Lian-Mao
中科院分区：
文献类型：
--
作者：
Xu, Huilong;Zhang, Zhiyong;Peng, Lian-Mao
采用超薄 Y2O3 薄膜作为顶栅氧化物制造了基于石墨烯的金属氧化物半导体 (MOS) 结构。虽然石墨烯的量子电容是使用 MOS 结构测量的，并且显示与大沟道电势下的理想石墨烯的理论非常吻合，但它与狄拉克点附近的理论有很大偏差。开发了通用微观电容模型并用于描述狄拉克点附近的量子电容异常。使用该模型与实验结果非常吻合，并检索了包括电势波动和局部载流子密度波动在内的关键参数。
Metal-oxide-semiconductor (MOS) structures based on graphene were fabricated with ultrathin Y2O3 films as the top gate oxide. While the quantum capacitance of graphene was measured using the MOS structure and shown to agree well with theory for ideal graphene at large channel potential, it deviates significantly from theory near the Dirac point. A general microscopic capacitance model is developed and used to describe the quantum capacitance anomaly near the Dirac point. Excellent agreement with experiment results was achieved using this model and key parameters including potential fluctuation and local carrier density fluctuation were retrieved.
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影响因子：
10.8
作者：
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通讯作者：
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影响因子：
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通讯作者：
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作者：
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通讯作者：
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