Frequency domain simulation of conducted EMI in power electronic converters considering internal near field couplings by FEM
Frequency domain simulation of conducted EMI in power electronic converters considering internal near field couplings by FEM
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通过 FEM 考虑内部近场耦合的电力电子转换器中传导 EMI 的频域仿真
DOI：
10.1109/emceurope.2017.8094780
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Funaki
中科院分区：
文献类型：
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作者：
Keita Takahashi;T. Ibuchi;T. Funaki
在设计高功率密度变换器时，母线、电容器和电感等电力电子元件彼此靠近。因此，在设计低电磁干扰（EMI）变换器时，应考虑这些元件之间的内部近场耦合。本文提出了一种新的电力电子变换器电磁干扰仿真的频域模型。本文主要通过频域仿真来评估内部耦合，采用有限元法（FEM）进行全波仿真，无需复杂的等效电路模型。为了模拟瞬态电压噪声（dv/dt噪声）和瞬态电流噪声（di/dt噪声），我们使用了两种噪声源模型（电压源噪声模型和电流源噪声模型）。通过对实测和模拟的电磁干扰进行比较，证实了模型的有效性，结果吻合良好。
Power electronic components such as busbars, capacitors, and inductors are positioned close to each other when designing a high power density converter. Therefore, the internal near field couplings between these components should be considered when designing a low electromagnetic interference (EMI) converter. In this paper, we propose a new frequency domain model for simulation of EMI in power electronic converters. We focused on frequency domain simulation to assess the internal couplings by finite element method (FEM) full wave simulation without requiring a complicated equivalent circuit model. In order to simulate both the transient voltage noise (dv/dt noise) and transient current noise (di/dt noise), we used two noise source models (a voltage source noise model and a current source noise model). We compared the measured and simulated EMI to confirm the validity of our model, and found good agreement.
SiC与GaN功率晶体管传导噪声特性对比研究
DOI：
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发表时间：
2016
期刊：
影响因子：
--
作者：
Takaaki Ibuchi;Tsuyoshi Funaki
通讯作者：
Tsuyoshi Funaki