Fabrication and application of a microfluidic‐embedded silicon nanowire biosensor chip

Fabrication and application of a microfluidic‐embedded silicon nanowire biosensor chip
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微流控硅纳米线生物传感器芯片的制备及应用

DOI:
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发表时间:
2010
期刊:
影响因子:
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通讯作者:
S. Ingebrandt
S. Ingebrandt
中科院分区:
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文献类型:
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作者:
X. Vu;R. Stockmann;B. Wolfrum;A. Offenhäusser;S. Ingebrandt

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我们报道了在4′′绝缘体上硅(SOI)晶片上用自顶向下工艺实现的硅纳米线(SiNW)晶体管阵列的制造。该工艺是第二个优化版本,其结合了热纳米压印光刻和湿法化学蚀刻,以在一个蚀刻步骤中从顶部硅层中限定平面纳米线和接触线。我们使用离子注入来降低源极和漏极接触线的串联电阻。总共有56个可单独寻址的SiNW排成两行。线的尺寸在宽度上下降到60 nm,在高度上下降到40 nm,具有最多40 μm的长度。由于工艺的改进,我们在整个4“”晶片上获得了几乎相同的导线结构和电子特性,从而能够直接比较来自一个芯片的信号。这些金属丝被一个微梭状结构覆盖,该结构用于管理不同的分析物溶液。第一pH表征测量和分子检测实验使用带电的聚电解质(PE)和聚(D)赖氨酸是成功的。在未来,这些设备可用于观察分析物的扩散,其具有时间依赖性、空间和定量分辨率。
We report the fabrication of a silicon nanowire (SiNW) transistor array realized in a top‐down process on 4′′ silicon‐on‐insulator (SOI) wafers. This process is a second, optimized version combining thermal nanoimprint lithography and wet chemical etching to define planar nanowires and contact lines out of the top silicon layer in one etching step. We used ion implantation to reduce series resistance of source and drain contact lines. In total 56 individually addressable SiNWs were aligned in two lines. Wires dimensions were down to 60 nm in width and 40 nm in height having lengths up to 40 µm. Due to an improved processing we obtained almost identical wire structures and electronic properties throughout the 4′′ wafer enabling direct comparison of signals from one chip. The wires were capped by a microfuidic structure, which was used to administer different analyte solutions. First pH characterization measurements and molecular detection experiments using charged polyelectrolytes (PEs) and poly(D)lysine were successful. In future these devices could be used to observe diffusion of analytes in a time‐dependent, spatially‐ and quantitatively‐resolved readout.
DOI: 10.1002/pssa.200880475
发表时间: 2009-03-01
影响因子: 2
作者:
Vu, Xuan Thang;Eschermann, Jan Felix;Ingebrandt, Sven
通讯作者: Ingebrandt, Sven