Self-aligned organic thin-film transistors for flexible electronics
Self-aligned organic thin-film transistors for flexible electronics
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用于柔性电子产品的自对准有机薄膜晶体管
DOI：
10.1117/12.2500673
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
U. Hilleringmann
中科院分区：
文献类型：
--
作者：
T. Meyers;J. Reker;J. Temme;F. F. Vidor;U. Hilleringmann
数字化是低成本电子领域技术发展的主要驱动力之一。传感器和RFID标签应尽可能以低成本集成，以轻松升级具有新功能的日常物品。这种升级对象的关键元件通常是薄膜晶体管（TFT）。在本文中，我们分析了两种不同的市售高k纳米复合材料ino®flex Z3和ino®flex T3的频率依赖性介电常数和表面特性。使用ino®flex Z3或ino®flex T3作为栅极电介质的TFT使用常见的MEMS集成方法制造，随后进行电学分析。为了进一步优化器件，采用了自对准集成技术，将纳米复合材料ino®flex T3用作栅极电介质。对于所有集成TFT，二萘并[2，3-B：2′，3 ′-f]噻吩并[3，2-B]噻吩（DNTT）用作有源半导体。
The digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ino®flex Z3 and ino®flex T3 regarding their frequencydependent dielectric constant and surface properties. TFTs using either ino®flex Z3 or ino®flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ino®flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.
用于柔性电子产品的低压 C8-BTBT 薄膜晶体管
DOI：
--
发表时间：
2017
期刊：
影响因子：
--
作者：
T. Meyers;F. Vidor;C. Puls;U. Hilleringmann
通讯作者：
U. Hilleringmann
影响因子：
2.3
作者：
Meyers, Thorsten;Vidor, Fabio F.;Hilleringmann, Ulrich
通讯作者：
Hilleringmann, Ulrich