Synchrotron Radiation Irradiation Effects for S i H n on Si(100) Surface in the Synchrotron Radiation Stimulated Si Gas Source Molecular Beam Epitaxy
Synchrotron Radiation Irradiation Effects for S i H n on Si(100) Surface in the Synchrotron Radiation Stimulated Si Gas Source Molecular Beam Epitaxy
复制标题
同步辐射激励硅气源分子束外延中Si(100)表面Si H n 的同步辐射辐照效应
DOI：
10.7567/jjap.34.6894
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发表时间：
1995
影响因子：
1.5
通讯作者：
T. Urisu
中科院分区：
文献类型：
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作者：
A. Yoshigoe;M. Nagasono;K. Mase;T. Urisu
利用CoSi2埋层衬底红外反射吸收光谱(BML-IRAS)，在低衬底温度(400°C~140°C)范围内，原位研究了同步辐射(SR)激发气体源分子束外延(SR-GSMBE)过程中Si(100)表面上的SiHn.研究发现，表面的SiH_2和SiH_3很容易被SR分解成SiH，而SiH的分解速度非常慢。SiH_2和SiH_3的分解反应截面分别为5.7×10~(-20)cm~2和1.7×10~(-19)cm~2。讨论了局域多孔激发及其猝灭模型的实验结果。
SiH n on Si (100) surfaces during synchrotron radiation (SR) stimulated gas source molecular beam epitaxy (SR-GSMBE) using Si2H6 gas (1.0×10-3 Torr) are investigated in situ by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates (BML-IRAS) in the low substrate temperature region (400° C-140° C). It has been found that SiH2 and SiH3 on the surface are easily decomposed by SR to SiH and the decomposition rate of SiH is extremely slow. The decomposition reaction cross sections for SiH2 and SiH3 for the total irradiating photon flux have been evaluated to be 5.7×10-20 cm2 and 1.7×10-19 cm2, respectively. Experimental results are discussed, considering the model of the localized multihole excitation and its quenching.
DOI：
10.1116/1.575980
发表时间：
1989-05-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
影响因子：
--
作者：
CHABAL, YJ;HIGASHI, GS;BURROWS, VA
通讯作者：
BURROWS, VA