Extraction of mean free path of charge carriers in CdZnTe crystals from measured full-energy peaks
Extraction of mean free path of charge carriers in CdZnTe crystals from measured full-energy peaks
复制标题
从测量的全能峰提取 CdZnTe 晶体中载流子的平均自由程
DOI：
10.1016/s0168-9002(01)02126-x
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发表时间：
2002
影响因子：
1.4
通讯作者：
M. Matsumoto
中科院分区：
文献类型：
--
作者：
S. Miyajima;Hideaki Sakuragi;M. Matsumoto
从测量的γ能谱中提取了CdZnTe晶体中电子和空穴的平均自由程λe和λh。首先，由于高斯加宽的失真展开的γ射线谱的全能量峰。结果，在未折叠的峰中仅留下拖尾。其次，通过拟合计算的响应函数中的全能峰与展开γ能谱中的全能峰的拖尾，确定λ e和λ h。使用EGS 4和编码的Hecht方程计算响应函数。在2500 V / cm的电场下，得到λ e为2.5×10 - 2cm，λ h为5.0×10 - 2cm：电子的μτ产物为1.0×10 - 1cm 2/ V，空穴的μτ产物为2.0×10 - 5cm 2/ V。该方法可以合理地获得λ e和λh，这是校正X射线光谱中拖尾引起的失真所必需的。
The mean free path of electrons (λe) and holes (λh) in a CdZnTe crystal were extracted from measured γ-ray spectra. First, distortion due to Gaussian broadening was unfolded from full-energy peaks in the γ-ray spectra. As a result, only tailing was left in the unfolded peaks. Second, λeand λhwere determined by fitting tailing of full-energy peaks in calculated response functions to that in the unfolded γ-ray spectra. The response functions were calculated using EGS4 with the Hecht equation coded. 2.5×102cm for λeand 5.0×10−2cm for λhwere obtained in an electric field of 2500 V / cm : the μτ products were found to be 1.0×10−1cm2/ V for electrons and 2.0×10−5cm2/ V for holes. This method is reasonable to obtain λeand λh, which are necessary to correct the distortion caused by tailing in X-ray spectra.
用于测量诊断 X 射线光谱的探测器的蒙特卡罗模拟研究。
影响因子：
3.8
作者：
Chen,CS;Doi,K;Vyborny,C;Chan,HP;Holje,G
通讯作者：
Holje,G