Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
复制标题
离子注入和激光热退火对n型重掺杂Ge的低温失活
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
E. Napolitani
中科院分区：
文献类型：
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作者：
R. Milazzo;G. Impellizzeri;D. Piccinotti;D. Salvador;A. Portavoce;A. Magna;G. Fortunato;D. Mangelinck;V. Privitera;A. Carnera;E. Napolitani
Ge的重掺杂对于一些先进的微光电应用至关重要，但同时，它仍然极具挑战性。通过As离子注入和熔化激光热退火（LTA）以1 × 1020 cm−3的浓度重掺杂的Ge在这里被证明是高度亚稳态的。在LTA后的常规热退火中，As在350 °C时已经电失活，达到104 × 1019 cm−3的活性浓度。在450 °C以下没有发现明显的As扩散，此时As的活化进一步降低到103 × 1019 cm−3。观察到的有害失活的原因进行了研究，原子探针断层扫描和原位高分辨率X射线衍射测量。一般来说，需要仔细评估重掺杂Ge层的热稳定性，因为如图所示，失活可能发生在非常低的温度下，接近n型Ge的低电阻率欧姆接触所需的温度。
Heavy doping of Ge is crucial for several advanced micro- and optoelectronic applications, but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a concentration of 1 × 1020 cm−3 by As ion implantation and melting laser thermal annealing (LTA) is shown here to be highly metastable. Upon post-LTA conventional thermal annealing As electrically deactivates already at 350 °C reaching an active concentration of ∼4 × 1019 cm−3. No significant As diffusion is detected up to 450 °C, where the As activation decreases further to ∼3 × 1019 cm−3. The reason for the observed detrimental deactivation was investigated by Atom Probe Tomography and in situ High Resolution X-Ray Diffraction measurements. In general, the thermal stability of heavily doped Ge layers needs to be carefully evaluated because, as shown here, deactivation might occur at very low temperatures, close to those required for low resistivity Ohmic contacting of n-type Ge.
影响因子：
4
作者：
Gallacher, K.;Velha, P.;Leadley, D. R.
通讯作者：
Leadley, D. R.