Extended core structure and luminescence of a-screw dislocations in GaN
Extended core structure and luminescence of a-screw dislocations in GaN
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GaN 中 a 螺旋位错的扩展核心结构和发光
DOI：
10.1088/1742-6596/1190/1/012006
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
M Seibt
中科院分区：
文献类型：
--
作者：
O. S. Medvedev;O. F. Vyvenko;E. V. Ubyivovk;S. V. Shapenkov;M Seibt
通过刻划故意未掺杂的低欧姆 GaN 的基底 (0001) 引入的 a 螺旋位错的直段在约 3.1-3.2 eV 的光谱区域中辐射出窄发光线的双线，而位错交叉点具有约 3.3 eV 的发光带。透射电子显微镜显示位错核解离成两个30 0 部分，由宽度为4-6 nm 的堆垛层错（SF）带分隔开，并且位错节点包含尺寸为25-30 nm 的扩展SF。位错相关发光 (DRL) 归因于受部分位错核和 SF 量子阱状态束缚的激子。假设 SF 横向尺寸的增加会导致直位错及其节点之间的 DRL 谱偏移，这是由于系统维度分别从 1D 过渡到 2D。
Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection points possess luminescence band at about 3.3 eV. Transmission electron microscopy reveals that the dislocation cores are dissociated into two 30 0 partials separated by stacking fault (SF) ribbon with the width of 4-6 nm width and that the dislocation nodes contain extended SF of sizes of 25-30 nm. Dislocation-related luminescence (DRL) is ascribed to exciton bound by the states of partial dislocation cores and of SF quantum well. The increase of the SF lateral sizes is assumed to cause the DRL spectral shift between straight dislocations and their nodes due to the system dimensionality transition from 1D to 2D respectively.
GaN 中作为发光量子点的基底螺旋位错的交叉节点
DOI：
--
发表时间：
2017
期刊：
影响因子：
--
作者：
O. Medvedev;O. Vyvenko
通讯作者：
O. Vyvenko