Anomalous temperature characteristics of single wide quantum well InGaN laser diode
Anomalous temperature characteristics of single wide quantum well InGaN laser diode
复制标题
单宽量子阱InGaN激光二极管的反常温度特性
DOI：
10.1063/1.2177368
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发表时间：
2006
影响因子：
4
通讯作者：
P. Eliseev
中科院分区：
文献类型：
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作者：
T. Swietlik;G. Franssen;P. Wiśniewski;S. Krukowski;S. P. Łepkowski;L. Marona;M. Leszczynski;P. Prystawko;I. Grzegory;T. Suski;S. Porowski;P. Perlin;R. Czernecki;A. Bering;P. Eliseev
通过在InGaN紫色发光激光二极管的有源层中使用宽量子阱（95 A），我们设法制造出具有非常高的阈值电流的热稳定性的器件。测得的特征T0温度为302K，这是迄今为止报道的最高值。在器件热循环后，T0下降到220K的较低值。在我们的器件中，非常高的T0值伴随着器件斜率效率的异常温度行为。斜率效率随温度的升高而提高，达到最大值后逐渐降低。这种行为，我们解释为之间的竞争，定期增加的热载流子逃逸和载流子捕获效率的提高与相反的温度依赖性。后者的机制，我们暂时归因于温度淬火的弹道输运相关的载流子泄漏的激光二极管的有源区。
By using an atypically wide quantum well (95A) in the active layer of InGaN violet light emitting laser diode, we managed to fabricate a device characterized by very high thermal stability of the threshold current. The characteristic T0 temperature was measured to be 302K, which is the highest reported value up to date. After thermal cycling of the device, T0 drops down to the lower value of 220K. The very high value of T0 in our devices is accompanied by anomalous temperature behavior of the device slope efficiency. The slope efficiency improves with increasing temperature, reaches a maximum and then gradually decreases. This behavior we interpret as the competition between a regular increase of the thermal carrier escape and an improvement of carrier capture efficiency with an opposite temperature dependence. The latter mechanism we tentatively attribute to the temperature quenching of the ballistic transport related carrier leakage from the active region of the laser diode.
DOI：
10.1007/978-3-642-58562-3
发表时间：
1999
期刊：
--
影响因子：
--
作者：
H. Morkoç
通讯作者：
H. Morkoç