Synergistic Effect of Ionization and Displacement Defects in NPN Transistors Induced by 40-MeV Si Ion Irradiation With Low Fluence
Synergistic Effect of Ionization and Displacement Defects in NPN Transistors Induced by 40-MeV Si Ion Irradiation With Low Fluence
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低通量40 MeV硅离子辐照引起NPN晶体管电离和位移缺陷的协同效应
DOI：
10.1109/tdmr.2015.2475272
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发表时间：
2015-09
影响因子：
2
通讯作者：
Sun Zhongliang
中科院分区：
文献类型：
--
作者：
Li Xingji;Liu Chaoming;Yang Jianqun;Ma Guoliang;Jiang Lidong;Sun Zhongliang
基于3DG 110晶体管和特殊栅控NPN（GNPN）晶体管，利用深能级瞬态谱（DLTS）技术研究了40 MeV低注量硅离子引起的电离和位移缺陷的协同效应特性。在40 MeV Si离子辐照下，双极结型晶体管（BJT）的低注量与辐照响应之间存在明显的非线性关系，这种关系是由协同效应引起的。在3DG 110晶体管的基极-集电极结中检测到位移缺陷中心和氧化物陷阱电荷的DLTS信号。同时，基于GNPN晶体管，测量了基极-集电极结中界面陷阱和位移缺陷的DLTS信号。通过比较电参数的变化和DLTS信号发现，界面陷阱对NPN BJT基区-集电结中的位移缺陷产生了增强效应，而氧化物陷阱电荷在一定程度上抑制了深能级中心的DLTS信号。与抑制作用相比，电离损伤引起的增强效应对位移损伤的贡献更大。此外，在DLTS测量过程中使用的偏置可以影响由氧化物陷阱电荷和界面陷阱引起的DLTS信号的特性。随着偏压的增加，DLTS谱中电离缺陷峰的高度和温度都增加，说明这些缺陷的浓度和能级都增加了。
Based on 3DG110 transistors and special gated NPN (GNPN) transistors, the characteristic of the synergistic effect between ionization and displacement defects induced by 40-MeV silicon (Si) ions with low fluence was investigated in terms of deep-level transient spectroscopy (DLTS). Nonlinear relationship, produced by the synergistic effect, between low fluence and radiation response can be obviously observed in the bipolar junction transistors (BJTs) under the exposure of 40-MeV Si ions. The DLTS signals of displacement defect centers and oxide-trapped charges are detected in the base-collector junction of the 3DG110 transistors. Meanwhile, based on the GNPN transistors, the DLTS signals of interface traps and displacement defects are measured in the base-collector junction. By comparison of the change in electrical parameters and the DLTS signals, it is found that the interface traps induce an enhanced effect to displacement defects in the base-collector junction of NPN BJT, whereas the oxide-trapped charge can suppress the DLTS signals of deep-level centers to a certain extent. Compared with the suppression action, the enhanced effect rising from ionization damage gives more contribution to the displacement damage. Moreover, the bias used during DLTS measurements can influence the characteristics of DLTS signals caused by oxide-trapped charge and interface traps. With increasing bias, both the height and temperature of ionization defect peaks in the DLTS spectra will increase, illustrating that concentration and energy level of these defects are raised.
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影响因子：
1.8
作者：
G. Summers;E. Burke;C. Dale;E. A. Wolicki;P. Marshall;M. Gehlhausen
通讯作者：
G. Summers;E. Burke;C. Dale;E. A. Wolicki;P. Marshall;M. Gehlhausen
影响因子：
2.4
作者：
P. Ekins
通讯作者：
P. Ekins
影响因子：
1.9
作者：
F. Blattner
通讯作者：
F. Blattner
影响因子：
1.6
作者：
Vicki D Crinis
通讯作者：
Vicki D Crinis
影响因子：
0.2
作者：
R. Eglash
通讯作者：
R. Eglash