Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
复制标题
通过霍尔效应测量研究掺入 Ba 的 4H-SiC MOSFET 的增强场效应迁移率
DOI：
10.1063/1.5034048
复制
发表时间：
2018
期刊：
影响因子：
1.6
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
--
作者：
Eigo Fujita;M. Sometani;T. Hatakeyama;S. Harada;H. Yano;T. Hosoi;T. Shimura;Heiji Watanabe
通过结合霍尔效应和分裂电容 - 电压测量，研究了在绝缘体/碳化硅界面中掺入钡对4H - 碳化硅金属 - 氧化物 - 半导体场效应晶体管（MOSFET）性能的改善。研究发现，适中的退火温度导致可忽略不计的金属增强氧化，这对于场效应晶体管的场效应迁移率（μFE）的提高以及栅极氧化物表面粗糙度的抑制是非常有益的。这种综合方法表明，虽然碳化硅 - MOSFET中严重的μFE退化是由于在二氧化硅/碳化硅界面处的载流子俘获导致有效可移动载流子减少引起的，但在界面中掺入钡显著增加了可移动载流子密度，其影响比广泛使用的氮化界面更大。通过结合霍尔效应和分裂电容 - 电压测量，研究了在绝缘体/碳化硅界面中掺入钡对4H - 碳化硅金属 - 氧化物 - 半导体场效应晶体管（MOSFET）性能的改善。研究发现，适中的退火温度导致可忽略不计的金属增强氧化，这对于场效应晶体管的场效应迁移率（μFE）的提高以及栅极氧化物表面粗糙度的抑制是非常有益的。这种综合方法表明，虽然碳化硅 - MOSFET中严重的μFE退化是由于在二氧化硅/碳化硅界面处的载流子俘获导致有效可移动载流子减少引起的，但在界面中掺入钡显著增加了可移动载流子密度，其影响比广泛使用的氮化界面更大。
Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (μFE) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe μFE degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces.Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (μFE) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe μFE degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces.
影响因子：
4.9
作者：
Okamoto, Dai;Yano, Hiroshi;Fuyuki, Takashi
通讯作者：
Fuyuki, Takashi